The first experimental mapping of the ion beam channels near the Si 〈001〉 axis is reported. Remarkably fine structure is observed, with over thirty microchannels identified within 20 degrees of the Si 〈001〉 axis. Each map is made from about 16000 channeling spectra with each channeling probability becoming a pixel of information in the final plot. Contour maps have been constructed for ions of He and N with energies from 50 to 2000 keV. All features are identified by theoretical plots of silicon planar channels and axial channels.