Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-17T16:29:40.349Z Has data issue: false hasContentIssue false
  • English
  • Français

Binding of Copper and Nickel to Cavities in Silicon Formed by Helium Ion Implantation

Published online by Cambridge University Press:  22 February 2011

S.M. Myers ,
D.M. Follstaedt  and
D.M. Bishop
S.M. Myers
Affiliation:
Semiconductor Physics Dept. 1112, Sandia National Laboratories, Albuquerque, NM 87185-1056
D.M. Follstaedt
Affiliation:
Semiconductor Physics Dept. 1112, Sandia National Laboratories, Albuquerque, NM 87185-1056
D.M. Bishop
Affiliation:
Semiconductor Physics Dept. 1112, Sandia National Laboratories, Albuquerque, NM 87185-1056
Get access

Abstract

Cavities formed in Si by He ion implantation and annealing are shown be strong traps for Cu and Ni impurities. Experiments utilizing ion-beam analysis and transmission electron microscopy indicate that Cu is trapped at the internal surfaces of cavities up to ≈1 monolayer coverage with a binding energy of 2.2±0.2 eV relative to solution. This is greater than the heat of solution from the precipitated Cu3Si phase, determined to be 1.7 eV in agreement with earlier work. Copper at cavity-wall sites is reversibly replaced by H during heating in H2 gas, indicating the relative stability of the two surface terminations. Initial results for Ni impurities indicate that trapping at cavities is again energetically preferred to suicide formation. The saturation coverage of Ni on the internal surfaces, however, is an order of magnitude smaller for Ni than Cu, consistent with published studies of external-surface adsorption. These results suggest that cavity trapping may getter metallic impurities in Si more effectively than methods based on suicide precipitation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 33
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Schröter, W., Seibt, M., and Grilles, D., in Materials Science and Technology Vol. 4: Electronic Structure and Properties of Semiconductors, edited by Schröter, W. (VCH Publishers., New York, 1991) pp. 539–589.Google Scholar
2 MRS Bulletin 18 (6) (June 1993).Google Scholar
3 Buck, T.M., Pickar, K.A., and Poate, J.M., Appl. Phys. Lett. 21, 485 (1972).Google Scholar
4 Chambliss, D.D. and Rhodin, T.N., Phys. Rev. B 42, 1674 (1990), and references therein.Google Scholar
5 Kemmann, H., Müller, F., and Neddermeyer, H., Surf. Sci. 192, 11 (1987).Google Scholar
6 Wilson, R.J. and Chiang, S., Phys. Rev. Lett. 58, 2575 (1987).Google Scholar
7 Dolbak, A.E., Olshanetsky, B.Z., Stenin, S.I., and Teys, S.A., Surf. Sci. 218, 37 (1989).Google Scholar
8 Griffioen, C.C., Evans, J.H., de Jong, P.C., and Van Veen, A., Nucl. Instrum. Meth. 27, 417 (1987).Google Scholar
9 Myers, S.M., Follstaedt, D.M., Stein, H.J., and Wampler, W.R., Phys. Rev. B 47, 13380 (1993).Google Scholar
10 Follstaedt, D.M. and Myers, S.M., present symposium proceedings.Google Scholar
11 Myers, S.M. and Follstaedt, D.M., J. Appl. Phys. 65, 311 (1989).Google Scholar
12 Follstaedt, D.M., Appl. Phys. Lett. 62, 1116 (1993).Google Scholar
13 Weber, E.R., Appl Phys. A 30, 1 (1983).Google Scholar
14 Dorward, R.C. and Kirkaldy, J.S., Trans. Met. Soc. AIME 242, 2055 (1968).Google Scholar
15 Wampler, W.R., Myers, S.M., and Follstaedt, D.M., Phys. Rev. B 48, 4492 (1993).Google Scholar
16 Medernach, J.W. (private communication).Google Scholar