Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-01T02:27:49.543Z Has data issue: false hasContentIssue false
  • English
  • Français

Beam Induced Lateral Epitaxy: a new way to Lateral Growth in Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Shigeya Naritsuka ,
Koji Saitoh ,
Takashi Suzuki  and
Takahiro Maruyama
Shigeya Naritsuka
Affiliation:
Meijo University, Dept. of Materials Science and Engineering, Nagoya, 468–8502 Japan Meijo University, 21st century COE program “NANO FACTORY”
Koji Saitoh
Affiliation:
Meijo University, Dept. of Materials Science and Engineering, Nagoya, 468–8502 Japan
Takashi Suzuki
Affiliation:
Meijo University, Dept. of Materials Science and Engineering, Nagoya, 468–8502 Japan
Takahiro Maruyama
Affiliation:
Meijo University, Dept. of Materials Science and Engineering, Nagoya, 468–8502 Japan Meijo University, 21st century COE program “NANO FACTORY”
Get access

Extract

We developed a new technique of epitaxial lateral growth without using oxide masks called beam induced lateral epitaxy (BILE). In this technique, molecular beams are directed at a nearly glancing angle with respect to a substrate that has pre-fabricated truncated ridges. By using BILE we grew GaAs laterally from the side of ridges on a GaAs substrate. The growth behavior of BILE strongly depended on both incident angle of the Ga beam and the crystal orientation of the truncated ridges. The formation of facets on the lateral growth front controlled the grown shape of the layers. By using a (111) B substrate with BILE, we grew a smooth, flat (111) B facet on the top of the layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z2.4
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Fang, S. F., Adomi, L., Iyer, S., Morkoc, H., Zabel, H., Choi, C. and Otsuka, N., J. Appl. Phys., 68 (1990) R31.Google Scholar
[2] Georgakilas, A., Panayotatos, P., Stoemenos, J., Mourrain, J.-L. and Christou, A., J. Appl. Phys., 71 (1992) 2679.Google Scholar
[3] Windhorn, T. H., Metze, G. M., Tsaur, B. Y. and Fan, John C. C., Appl. Phys. Lett. 45 (1984) 309.Google Scholar
[4] van der Ziel, J. P., Dupuis, R. D., Logan, S. A. and Pinzone, C. J., Appl. Phys. Lett. 51 (1987) 89.Google Scholar
[5] Egawa, T., Hasegawa, Y., Jimbo, T. and Umeno, M., Appl. Phys. Lett., 67 (1995) 2995.Google Scholar
[6] Nishinaga, T., Nakano, T. and Zhang, S., J. J. Appl. Phys. 27 (1988) L964.Google Scholar
[7] Ujiie, Y. and Nishinaga, T., J. J. Appl. Phys. 28, (1989) L337.Google Scholar
[8] Zhang, S. and Nishinaga, T., J. Crystal Growth 99, (1990) L292.Google Scholar
[9] Chang, Y. S., Naritsuka, S., and Nishinaga, T., J. Crystal Growth 174, (1997) 630.Google Scholar
[10] Chang, Y. S., Naritsuka, S., and Nishinaga, T., J. Crystal Growth 192, (1998) 18.Google Scholar
[11] Naritsuka, S., Nishinaga, T., Tachikawa, M., and Mori, H., Japan. J. Appl. Phys. 34, (1995) L1432.Google Scholar
[12] Suzuki, T., Naritsuka, S., Maruyama, T. and Nishinaga, T., Cryst. Res. Technol. 38, (2003) 614.Google Scholar