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2DEGs and 2DHGs Induced by Spontaneous and Piezoelectric Polarization in AlGaN/GaN Heterostructures

Published online by Cambridge University Press:  15 March 2011

O. Ambacher ,
A. Link ,
S. Hackenbuchner ,
M. Stutzmann ,
R. Dimitrov ,
M. Murphy ,
J. Smart ,
J.R. Shealy ,
B. Green  and
W.J. Schaff
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O. Ambacher
Affiliation:
Walter Schottky Institute, TU-Munich, Am Coulombwall, D-85748 Garching, Germany, ambacher@wsi.tu-muenchen.de
A. Link
Affiliation:
Walter Schottky Institute, TU-Munich, Am Coulombwall, D-85748 Garching, Germany
S. Hackenbuchner
Affiliation:
Walter Schottky Institute, TU-Munich, Am Coulombwall, D-85748 Garching, Germany
M. Stutzmann
Affiliation:
Walter Schottky Institute, TU-Munich, Am Coulombwall, D-85748 Garching, Germany
R. Dimitrov
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USA
M. Murphy
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USA
J. Smart
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USA
J.R. Shealy
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USA
B. Green
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USA
W.J. Schaff
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USA
L.F. Eastman
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USA
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Abstract

Two dimensional hole and electron gases in wurtzite GaN/AlxGa1-xN/GaN heterostructures are induced by strong polarization induced effects. The sheet carrier concentration and the confinement of the two dimensional carrier gases located close to one of the AlGaN/GaN interfaces are sensitive to a high number of different physical properties such as polarity, alloy composition, strain, thickness and doping. We have investigated the structural quality, the carrier concentration profiles and electrical transport properties by a combination of high resolution x- ray diffraction, Hall effect and C-V profiling measurements. The investigated heterostructures with N- and Ga-face polarity were grown by metalorganic vapor phase or plasma induced molecular beam epitaxy covering a broad range of alloy compositions and barrier thickness. By comparison of theoretical and experimental results we demonstrate that the formation of two dimensional hole and electron gases in GaN/AlGaN/GaN heterostructures both rely on the difference of the polarization between the AlGaN and the GaN layer. In addition the role of polarity on the carrier accumulation at different interfaces in n- and p-doped heterostructures will be discussed in detail

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T5.10.1
Copyright
Copyright © Materials Research Society 2000

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References

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