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Parametric study of in situ growth of NdCeCuO thin films by laser ablation

Published online by Cambridge University Press:  03 March 2011

Wen-Tai Lin
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 700, Republic of China
Guo-Ju Chen
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 700, Republic of China
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Abstract

The stability fields of the NdCeCuO (NCCO) films and the Ce0.5Nd0.5O1.75 (CNO) phase grown by laser ablation from the stoichiometric targets, Nd1.85Ce0.15CuO4−8, are demonstrated, respectively. The superconducting NCCO films were grown in a specific field below and close to the CuO/Cu2O transition line, i.e., at 700–725°C in 20–50 mTorr, without vacuum annealing. On postdeposition cooling in lower oxygen pressures (<10 mTorr), the superconductivity of the NCCO films was significantly improved without vacuum annealing. The CNO phase usually appeared in the NCCO films at temperatures above 680 °C, and the higher the temperature the greater the CNO phase due to copper loss. A surplus of copper in the NCCO targets effectively suppressed the formation of the CNO phase, and thereby improved the superconductivity of the NCCO films.

Type
Articles
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1Tokura, Y., Takagi, H., and Uchida, S., Nature (London) 337, 345 (1989).CrossRefGoogle Scholar
2Takagi, H., Uchida, S., and Tokura, Y., Phys. Rev. Lett. 62, 1197 (1989).CrossRefGoogle Scholar
3J. M. Tarascon, Wang, E., Greene, L. H., Bagley, B. G., Hull, G. W., D'Egidio, S.M., Miceli, P. F., Wang, Z. Z., Jing, T. W., Clayhold, J., Brawner, D., and Ong, N. P., Phys. Rev. B 40, 4494 (1989).Google Scholar
4Vasquez, R. P., Gupta, A., and Kussmaul, A., Solid State Commun. 78, 303 (1991).CrossRefGoogle Scholar
5Hidaka, Y. and Suzuki, M., Nature (London) 338, 635 (1989).CrossRefGoogle Scholar
6Adachi, H., Hayashi, S., Setsune, K., Hatta, S., Mitsuyu, T., and Wasa, K., Appl. Phys. Lett. 54, 2713 (1989).CrossRefGoogle Scholar
7A Gupta, Koren, G., Tsuei, C. C., Segmuller, A., and McCuire, T. R., Appl. Phys. Lett. 55, 1795 (1989).CrossRefGoogle Scholar
8Gross, R., Gupta, A., Olsson, E., Segmuller, A., and Koren, G., Appl. Phys. Lett. 57, 203 (1990).CrossRefGoogle Scholar
9Tarashima, T., Bando, Y., Iijima, K., Yamamoto, K., Hiraka, K., Hayashi, K., Matsuda, Y., and Komiyama, S., Appl. Phys. Lett. 56, 677 (1990).CrossRefGoogle Scholar
10Tanda, S., Honma, M., and Nakayama, T., Phys. Rev. B 43, 8725 (1991).CrossRefGoogle Scholar
11Kussmaul, A., Moodera, J. S., Tedrow, P. M., and Gupta, A., Appl. Phys. Lett. 61, 2715 (1992).CrossRefGoogle Scholar
12Mao, S. N., Xi, X. X., Li, Q., Takeuchi, I., Bhattacharya, S., Kwon, C., Doughty, C., Walkenhorst, A., Venkatesan, T., Whan, C. B., Peng, J. L., and Greene, R. L., Appl. Phys. Lett. 62, 2425 (1993).CrossRefGoogle Scholar
13Beesabathina, D. P., Salamanca-Riba, L., Mao, S. N., Xi, X. X., and Venkatesan, T., Appl. Phys. Lett. 62, 3022 (1993).CrossRefGoogle Scholar
14Mao, S. N., Xi, X. X., Bhattacharya, S., Li, Q., Peng, J. L., Mao, J., Wu, D. H., Anlage, S. M., Greene, R. L., and Venkatesan, T., IEEE Trans. Supercond. 3, 1552 (1993).CrossRefGoogle Scholar
15Mao, S. N., Xi, X. X., Li, Q., Venkatesan, T., Beesabathina, D. P., Salamanca-Riba, L., and Wu, X. D., J. Appl. Phys. 75, 2119 (1994).CrossRefGoogle Scholar
16Lin, W. T. and Chen, Y. F.. Appl. Phys. Lett. 64, 2157 (1994).CrossRefGoogle Scholar
17Beesabathina, D. P., Salamanca-Riba, L., Mao, S. N., Xi, X. X., Venkatesan, T., and Wu, X. D., J. Mater. Res. 9, 1376 (1994).Google Scholar
18Idemoto, Y., Fuelu, K., and Shinbo, T., Physica C 166, 513 (1990).CrossRefGoogle Scholar
19Okram, G. S., Prakash, O., Padalia, B. D., Chandrasekharam, D., Tamhane, A.S. II, and Gupta, L.C. II, Supercond. Sci. Technol. 5, 561 (1992).CrossRefGoogle Scholar
20Kim, J. S. and Gaskell, D. R., Physica C 209, 381 (1993).CrossRefGoogle Scholar
21Lin, W. T. and Chen, G. J., unpublished work.Google Scholar
22Schmid, R., Metall. Trans. 14B, 473 (1983).CrossRefGoogle Scholar