Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Richards, Peter M.
1988.
Interface kinetics of freezing and melting with a density change.
Physical Review B,
Vol. 38,
Issue. 4,
p.
2727.
Larson, B. C.
Tischler, J. Z.
and
Mills, D. M.
1988.
Interface Temperatures and Temperature Gradients in Silicon During Pulsed Laser Irradiation.
MRS Proceedings,
Vol. 100,
Issue. ,
Grabow, Marcia H.
Gilmer, George H.
and
Bakker, Aloysius F.
1988.
Molecular Dynamics Studies of Silicon Solidification and Melting.
MRS Proceedings,
Vol. 141,
Issue. ,
Thompson, Michael O.
1988.
Nanosecond Resolved Temperature Measurements Following Pulsed Laser Irradiation.
MRS Proceedings,
Vol. 100,
Issue. ,
Schmitt, Douglas R.
Ahrens, Thomas J.
and
Svendsen, Bob
1988.
Shock-induced melting and shear banding in single-crystal NaCl.
Journal of Applied Physics,
Vol. 63,
Issue. 1,
p.
99.
Phillpot, S.R.
Lutsko, J.F.
and
Wolf, D.
1989.
Nucleation and kinetics of thermodynamic melting: A molecular dynamics study of grain-boundary induced melting in silicon.
Solid State Communications,
Vol. 70,
Issue. 3,
p.
265.
Kluge, Mark D.
and
Ray, John R.
1989.
Velocity versus temperature relation for solidification and melting of silicon: A molecular-dynamics study.
Physical Review B,
Vol. 39,
Issue. 3,
p.
1738.
Stolk, P.A.
Polman, A.
and
Sinke, W.C.
1989.
Freezing in Silicon at Large Undercooling.
MRS Proceedings,
Vol. 157,
Issue. ,
Stolk, P. A.
Polman, A.
and
Sinke, W. C.
1993.
Experimental test of kinetic theories for heterogeneous freezing in silicon.
Physical Review B,
Vol. 47,
Issue. 1,
p.
5.
Albenze, Erik J.
and
Clancy, Paulette
2005.
Interface Response Functions for Amorphous and Crystalline Si and the Implications for Explosive Crystallization.
Molecular Simulation,
Vol. 31,
Issue. 1,
p.
11.
Nikolova, Liliya
Stern, Mark J.
MacLeod, Jennifer M.
Reed, Bryan W.
Ibrahim, Heide
Campbell, Geoffrey H.
Rosei, Federico
LaGrange, Thomas
and
Siwick, Bradley J.
2014.
In situ investigation of explosive crystallization in a-Ge: Experimental determination of the interface response function using dynamic transmission electron microscopy.
Journal of Applied Physics,
Vol. 116,
Issue. 9,
Zhou, Naigen
Zhang, Chi
Zeng, Xiang
Yuan, Jiren
and
Zhou, Lang
2016.
A molecular dynamics study of the growth rate of SiC crystal and its dependence on the temperature.
International Journal of Modern Physics B,
Vol. 30,
Issue. 21,
p.
1650152.