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Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering

Published online by Cambridge University Press:  31 January 2011

L. Hultman ,
H. Ljungcrantz ,
C. Hallin ,
E. Janzén ,
J-E. Sundgren ,
B. Pécz  and
L. R. Wallenberg
L. Hultman
Affiliation:
Department of Physics, Linköping University, S–581 83 Linköping, Sweden
H. Ljungcrantz
Affiliation:
Department of Physics, Linköping University, S–581 83 Linköping, Sweden
C. Hallin
Affiliation:
Department of Physics, Linköping University, S–581 83 Linköping, Sweden
E. Janzén
Affiliation:
Department of Physics, Linköping University, S–581 83 Linköping, Sweden
J-E. Sundgren
Affiliation:
Department of Physics, Linköping University, S–581 83 Linköping, Sweden
B. Pécz
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, H–1325 Budapest, P.O. Box 76, Hungary
L. R. Wallenberg
Affiliation:
Inorganic Chemistry 2, Chemical Center, Lund University, P.O. Box 124, S–221 00 Lund, Sweden
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Abstract

Epitaxial TiN films were grown on cubic (3C)-SiC(001) and hexagonal (6H)-SiC(0001) substrates by ultrahigh vacuum reactive magnetron sputtering from a Ti target in a mixed Ar and N2 discharge at a substrate temperature of 700 °C. Cross-sectional transmission electron microscopy, including high-resolution imaging, showed orientational relationships TiN(001)‖3C-SiC(001), and TiN[110]‖3C-SiC[110], and TiN(111)‖6H-SiC(0001) and . In the latter case, twin-related TiN domains formed as the result of nucleation on SiC terraces with an inequivalent stacking sequence of Si and C. The TiN/SiC interface was locally atomically sharp for both SiC polytypes. Defects in the TiN layers consisted of threading double positioning domain boundaries in TiN(111) on 6H-SiC. Stacking faults in 3C-SiC did not propagate upon growth of TiN. Room-temperature resistivity of TiN films was ρ = 14 μΩ cm for 6H-SiC(0001) and ρ = 17 μΩ cm for 3C-SiC(001) substrates. Specific contact resistance of TiN to 6H-SiC(0001) was 1.3 3 10−3 Ω cm2 for a 6H-SiC substrate with an n-type doping of 5 × 1017 cm−3.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 10 , October 1996 , pp. 2458 - 2462
Copyright
Copyright © Materials Research Society 1996

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