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Fatigue-free La-modified Pb(Zr, Ti)O3 capacitors using aseed layer

Published online by Cambridge University Press:  31 January 2011

Santiranjan R. Shannigrahi ,
Sun-Hwa Lee  and
Hyun M. Jang
Santiranjan R. Shannigrahi
Affiliation:
Department of Materials Science and Engineering and National Research Laboratory (NRL) for Ferroelectric Phase Transitions, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Republic of Korea
Sun-Hwa Lee
Affiliation:
Department of Materials Science and Engineering and National Research Laboratory (NRL) for Ferroelectric Phase Transitions, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Republic of Korea
Hyun M. Jang*
Affiliation:
Department of Materials Science and Engineering and National Research Laboratory (NRL) for Ferroelectric Phase Transitions, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Republic of Korea
*
a)Address all correspondence to this author.hmjang@postech.ac.kr
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Abstract

The development of lead zirconate titanate (PZT)-based capacitors using common Pt electrodes has been a long-time goal of ferroelectric random access memories (FRAM).In this work, a series of Pb1−xLax(Zr0.55Ti0.45)O3 capacitors (for 0.01 < x < 0.05) having fatigue-free characteristics have been grown on Pt/ Ti/SiO2/Si substrates. Typically 2–3 mol% La-modified PZT capacitors fabricated at 580 °C by applying a PZT seed layer exhibited fatigue-free behavior up to 6.5 × 1010 switching cycles, a low coercive field of 50–55 kV/cm, and a stable charge retention profile with time, all of which assure their suitability for the future nonvolatile FRAM.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 17 , Issue 8 , August 2002 , pp. 1884 - 1887
Copyright
Copyright © Materials Research Society 2002

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