Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-09T05:51:46.641Z Has data issue: false hasContentIssue false

Stress-induced migration model based on atomic migration

Published online by Cambridge University Press:  03 March 2011

Minoru Aoyagi*
Affiliation:
Department of Electrical and Electronics Engineering, Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro-machi, Minami-saitama-gun, Saitama 345-8501, Japan
*
a) Address all correspondence to this author. e-mail: aoyagi@nit.ac.jp
Get access

Abstract

Stress-induced migration is one of the problems related to the reliability of metal interconnections in semiconductor devices. This phenomenon generates voids and disconnections in the metal interconnections. The purposes of this work are to establish the stress-induced model based on atomic migration and theoretically clarify the temperature characteristics of void formation and disconnection using the presented model. First, the stress-induced migration model based on atomic migration in which the driving force is the gradient of elastic potential is presented. Next, to clarify the temperature characteristics of stress-induced migration, the presented model is applied to the formation of voids and disconnections and the results of theoretical analyses are compared with experimental results. It was found that the temperature characteristics of the void formation show various patterns depending on the void interval, and the temperature characteristics of the disconnection show various patterns depending on the void interval and void radius. These theoretical results are in agreement with the experimental results.

Type
Articles
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Klema, J., Pyle, R., and Domangue, E.: Reliability implications of nitrogen contamination during deposition of sputtered aluminum/silicon metal films. in Proceedings of International Reliability Physics Symposium (IEEE, New York, 1984), Vol. 22, p. 1.Google Scholar
2.Curry, J., Fitzgibbon, G., Guan, Y., Muollo, R., Nelson, G., and Thomas, A.: New failure mechanism in sputtered aluminum-silicon films. in Proceedings of International Reliability Physics Symposium (IEEE, New York, 1984), Vol. 22, p. 6.Google Scholar
3.Yue, J.T., Funstem, W.P., and Taylor, P.V.: Stress induced voids in aluminum interconnects during IC processing. in Proceedings of International Reliability Physics Symposium (IEEE, New York, 1985), Vol. 23, p. 126.Google Scholar
4.Groothuis, S.K. and Schroen, W.H.: Stress related failures causing open metallization. in Proceedings of International Reliability Physics Symposium (IEEE, New York, 1987), Vol. 25, p. 1.Google Scholar
5.Kato, M., Niwa, H., Yagi, H. and Tsuchikawa, H.: Diffusional relaxation and void growth in an aluminum interconnect of very large scale integration. J. Appl. Phys. 68, 334 (1990).CrossRefGoogle Scholar
6.Koubuchi, Y., Onuki, J., Suwa, M., Fukada, S., Moribe, S. and Tanigaki, Y.: Stress migration resistance and contact characterization of Al-Pd-Si interconnects for very large scale integrations. J. Vac. Sci. Technol. B 8, 1232 (1990).CrossRefGoogle Scholar
7.Petrescu, V. and Mouthaan, A.J. in Stress Induced Phenomena in Metallization, Fourth International Workshop: Two dimensional simulation of mechanical stress evolution and electromigration in confined aluminum interconnects, edited by Okabayashi, H., Shingubara, S., and Ho, P. S. (American Institute of Physics Proc. 418, Woodbury, New York, 1997), p. 329.Google Scholar
8.Gleixner, R.J., Clements, B.M. and Nix, W.D.: Void nucleation in passivated interconnect lines: Effects of site geometries, interface, and interface flaws. J. Mater. Res. 12, 2081 (1997).CrossRefGoogle Scholar
9.Korhonen, M.A., Rzepka, S., Filippi, R.G. and Li, C-Y. in Stress Induced Phenomena in Metallization, Fourth International Workshop: Stress and electromigration modeling for confined chip level interconnect lines, edited by Okabayashi, H., Shingubara, S., and Ho, P. S. (American Institute of Physics Proc. 418, Woodbury, New York, 1997), p. 303.Google Scholar
10.Kitamura, T., Shibutani, T. and Ohtani, R. in Stress Induced Phenomena in Metallization, Fourth International Workshop: Numerical simulation on cavity growth under interaction between interface diffusion and lattice diffusion in an LSI conductor, edited by Okabayashi, H., Shingubara, S., and Ho, P. S. (American Institute of Physics Proc. 418, Woodbury, New York, 1997), p. 341.Google Scholar
11.Janssen, G.C.A.M., Lokker, J.P., Verbruggen, A.H. and Radelaar, S. in Stress Induced Phenomena in Metallization, Fourth International Workshop: Aluminum via-fill at elevated pressure and temperature, edited by Okabayashi, H., Shingubara, S., and Ho, P. S. (American Institute of Physics Proc. 418, Woodbury, New York, 1997), p. 349.Google Scholar
12.Nabarro, F.R.N. in Strength of Solids. Report of a conference on strength of solids: Deformation of crystals by motion of a single ions, edited by Mott, N. F. (Physical Society, London, 1948), p. 75.Google Scholar
13.Herring, C.: Diffusional viscosity of a polycrystalline solid. J. Appl. Phys. 21, 437 (1950).CrossRefGoogle Scholar
14.Aoyagi, M.: Modeling of vacancy flux due to stress-induced migration. J. Vac. Sci. Technol. B 21, 1314 (2003).CrossRefGoogle Scholar
15.Korhonen, M.A., Borgesen, P. and Li, C-Y.: Mechanisms of stress-induced and electromigration-induced damage in passivated narrow metallizations on rigid substrates. MRS Bull. 17, 61 (1992).CrossRefGoogle Scholar
16.Aoyagi, M. and Asada, K.: Quenching of vacancies in aluminum inter-connections on semiconductor devices. Jpn. J. Appl. Phys. (Part 2). 37, 24 (1998).CrossRefGoogle Scholar
17.Flinn, P.A., Lee, S., Doan, J., Marieb, T.N., Bravman, J.C. and Madden, M. in Stress Induced Phenomena in Metallization, Fourth International Workshop: Void phenomena in passivated metal lines: Recent observations and interpretation, edited by Okabayashi, H., Shingubara, S., and Ho, P. S. (American Institute of Physics Proc. 418, Woodbury, New York, 1997), p. 250.Google Scholar
18.Aoyagi, M. and Asada, K.: Vacancy distribution in aluminum interconnections on semiconductor devices. Jpn. J. Appl. Phys (Part 1). 38, 199 (1999).Google Scholar
19.Ziegler, H. An Introduction to Thermomechanics (North-Holland, Zurich, Switzerland, 1977).Google Scholar
20.Kittel, K. and Kroemer, H. Thermal Physics (W. H. Freeman and Company, New York, 1980).Google Scholar
21.Mcpherson, J.W. and Dunn, C.F.: A model for stress-induced metal notching and voiding in very large-scale-integrated Al-Si (1%) metallization. J. Vac. Sci. Technol. B5, 1321 (1987).CrossRefGoogle Scholar
22.Mayumi, S., Umemoto, T., Shishino, M., Nanatsue, H., Ueda, S., and Inoue, M.: The effect of Cu addition to Al-Si interconnects on stress induced open-circuit failures. in Proceedings of International Reliability Physics Symposium (IEEE, New York, 1987), Vol. 25, p. 15.CrossRefGoogle Scholar
23.Yost, F.G., Amos, D.E., and Romig, A.D. Jr.: Stress-driven diffusive voiding of aluminum conductor lines. in Proceedings of International Reliability Physics Symposium (IEEE, New York, 1989), Vol. 27, p. 193.Google Scholar
24.Ryan, J.G., Riendeau, J.B., Shore, S.E., Slusser, G.J., Beyar, D.C., Bouldin, D.P. and Sullivan, T.D.: The effects of alloying on stress induced void formation in aluminum-based metallizations. J. Vac. Sci. Technol. B8, 1474 (1990).CrossRefGoogle Scholar
25.Tokunaga, K. and Sugawara, K.: The influence of plasma silicon nitride passivation film quality on aluminum void formation. J. Electrochem. Soc. 138, 176 (1991).CrossRefGoogle Scholar
26.Timoshenko, S.P. and Goodier, J.N., Theory of Elasticity (McGraw-Hill, New York, 1970).Google Scholar
27.Jones, R.E. Jr.: Line width dependence of stresses in aluminum interconnects. in Proceedings of International Reliability Physics Symposium (IEEE, New York, 1987), Vol. 25, p. 9.CrossRefGoogle Scholar
28.Tezaki, A., Mineta, T., and Egawa, H.: Measurement of three dimensional stress and modeling of stress induced migration failure in aluminum interconnects. in Proceedings of International Reliability Physics Symposium (IEEE, New York, 1990), Vol. 28, p. 221.Google Scholar
29.Hinode, K., Owada, N., Nishida, T. and Mukai, K.: Stress-induced grain boundary fractures in Al–Si interconnects. J. Vac. Sci. Technol. B5, 518 (1987).CrossRefGoogle Scholar