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The oxygen deficiency effect of VO2 thin films prepared by laser ablation

Published online by Cambridge University Press:  31 January 2011

M. Nagashima  and
H. Wada
M. Nagashima
Affiliation:
Second Research Center, TRDI, Japan Defense Agency, 1-2-24 Ikejiri, Setagaya, Tokyo, Japan
H. Wada
Affiliation:
Second Research Center, TRDI, Japan Defense Agency, 1-2-24 Ikejiri, Setagaya, Tokyo, Japan
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Abstract

Vanadium dioxide thin films (VO2) have been deposited by laser ablation. The temperature dependence of resistivity and temperature coefficient of resistance (TCR) for each deposition condition were investigated. It was clarified that the TCR at room temperature (RT) can be optimized by controlling the oxygen pressure introduced during deposition as the deposition parameter. In the result, larger TCR's at RT were observed for the oxygen deficient condition of VO2 than for oxygen-richer samples. Obtained TCR values were 0.072/K and 0.045/K at 25°C for VO2 thin films deposited onto R-cut sapphire and SiO2/Si, respectively.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 2 , February 1997 , pp. 416 - 422
Copyright
Copyright © Materials Research Society 1997

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