Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-18T01:20:03.384Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition and characterization of ZrO2 thin films on silicon substrate by MOCVD

Published online by Cambridge University Press:  31 January 2011

Cheol Seong Hwang  and
Hyeong Joon Kim
Cheol Seong Hwang
Affiliation:
Department of Inorganic Materials Engineering, Seoul National University, Seoul, 151-742, Korea
Hyeong Joon Kim
Affiliation:
Department of Inorganic Materials Engineering, Seoul National University, Seoul, 151-742, Korea
Get access

Abstract

ZrO2 thin films were deposited at 1 atm on Si substrates by oxidation-assisted thermal decomposition of zirconium-trifluoroacetylacetonate in the temperature range of 300–615 °C. Above a deposition temperature of 400 °C, the deposited thin films have a columnar grain structure, where each grain is perpendicular to the substrate surface with a c-axis preferred crystallographic orientation, and have poor electrical characteristics as a dielectric thin film. But the thin film deposited at 350 °C has a fine equiaxed microcrystalline structure and has superior electrical characteristics of a breakdown field of 1 MV/cm and a relative dielectric constant of 27.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 6 , June 1993 , pp. 1361 - 1367
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Fuyuki, T. and Matsunami, H., Jpn. J. Appl. Phys. 25 (9), 1288–1291 (1986).CrossRefGoogle Scholar
2Siefering, K. L. and Griffin, G. L., J. Electrochem. Soc. 137 (4), 814–818 (1990).CrossRefGoogle Scholar
3Zaima, S., Furuta, T., and Yasuda, Y., J. Electrochem. Soc. 137(4), 1297–1300 (1990).CrossRefGoogle Scholar
4Zaima, S., Furuta, T., Koide, Y., and Yasuda, Y., J. Electrochem. Soc. 137 (9), 2876–2879 (1990).CrossRefGoogle Scholar
5Tauber, R. N., Dumbri, A. C., and Caffrey, R. E., J. Electrochem. Soc. 118 (5), 747–754 (1971).CrossRefGoogle Scholar
6Balog, M., Schieber, M., Michiman, M., and Patai, S., J. Electrochem. Soc. 126 (7), 1203–1207 (1979).CrossRefGoogle Scholar
7West, G.A. and Beeson, K.W., J. Mater. Res. 5, 1573–1580 (1990).CrossRefGoogle Scholar
8Temple, D. and Reisman, A., J. Electron. Mater. 19 (9), 995–1002 (1990).CrossRefGoogle Scholar
9Yamaguchi, T., Aoki, S., Sadakata, N., Kohno, O., and Osanai, H., Appl. Phys. Lett. 55 (15), 9, 1581–1582 (1989).CrossRefGoogle Scholar
10Gupta, A., Jagannathan, R., Cooper, E.I., Giess, E.A., Landanan, J.I., and Hussey, B.W., Appl. Phys. Lett. 52 (24), 13, 2077–2079 (1988).CrossRefGoogle Scholar
11Liau, B.Y. and Weppner, W., J. Electrochem. Soc. 138 (8), 2478–2483 (1991).Google Scholar
12Kao, A.S., J. Appl. Phys. 69 (5), 1, 3309–3315 (1991).CrossRefGoogle Scholar
13Kwok, C.K. and Aita, C.R., J. Vac. Sci. Technol. A 7 (3), 1235–1239 (1989).CrossRefGoogle Scholar
14Kwok, C.K. and Aita, C.R., J. Appl. Phys. 66 (6), 2756–2758 (1989).CrossRefGoogle Scholar
15Morita, M., Fukumoto, H., Imura, T., and Osaka, Y., J. Appl. Phys. 56 (6), 15, 2407–2409 (1985).CrossRefGoogle Scholar
16Hwang, C. S. and Kim, H. J., in Ceramic Transactions, Materials and Processes for Microelectronic Systems, edited by Nair, K. M., Pohanka, R., and Buchanan, R. C. (The American Ceramic Society, Westerville, OH, 1990), Vol. 15, pp. 437–456.Google Scholar
17Gilling, L. J., in Crystal Growth of Electronic Materials, edited by Kaldis, E. (North-Holland Physics Publishing Co., Amsterdam, The Netherlands, 1985).Google Scholar
18Handbook of X-ray Photoelectron Spectroscopy, edited by Wagner, C. D., Riggs, W. M., Davis, L. E., Moulder, J. F., and Muilenberg, G. E. (Perkin-Elmer Corporation, Eden Prairie, MN, 1978), pp. 100–101.Google Scholar
19Majumdar, D., J. Appl. Phys. 70 (2), 988–992 (1991).CrossRefGoogle Scholar
20Garvie, R.C., J. Phys. Chem. 69 (4), 1238–1243 (1965).CrossRefGoogle Scholar
21Garvie, R.C., J. Phys. Chem. 82 (2), 218–224 (1978).CrossRefGoogle Scholar
22Heyne, L., Electrochemistry of Mixed Ionic-Electronic Conductors in Solid Electrolytes, edited by Geiler, S. (Springer-Verlag, Berlin, 1977), pp. 169–221.Google Scholar
23Sze, S. M., Semiconductor Devices-Physics and Technology (John Wiley & Sons, New York, 1985), p. 196.Google Scholar