Symposium B – Rapid Thermal Processing of Electronic Materials
Research Article
Microwave Plasma LPCVD of Tungsten in a Cold-Wall Lamp-Heated Rapid Thermal Processor
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- 28 February 2011, 295
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Limited Reaction Processing: Growth of III-V Epitaxial Layers by Rapid Thermal Metalorganic Chemical Vapor Deposition
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- 28 February 2011, 305
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Rapid Thermal Annealing of Amorphous Hydrogenated Carbon (a-C:H) Films
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- 28 February 2011, 311
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Defect Structures and Electrical Behavior of Rapid Thermally Annealed Ion Implanted Silicon
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- 28 February 2011, 319
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Properties of Gallium Implanted Furnace and Rapidly Annealed Polycrystalline Silicon
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- 28 February 2011, 329
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Secondary Grain Growth During Rapid Thermal Annealing of Doped Polysilicon Films
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- 28 February 2011, 335
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Rapid Thermal Annealing of Oxygen-Vacancy Centers In O-Implanted Silicon
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- 28 February 2011, 341
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The Effect of Rapid Thermal Treatment on the Structural and Optoelectronic Properties of Epitaxial Gaas on Si Grown With or Without Ge Intermediate Layers
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- 28 February 2011, 347
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Point Defect Evolution During Rapid Thermal Annealing of Si+-Implanted GaAs.
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- 28 February 2011, 353
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Rapid-Thermal-Processing Induced Deep Level Traps and their Spatial Distribution in MBE GaAs
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- 28 February 2011, 361
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Formation of p+ and High Resistivity Regions in GaAs-AIGaAs Heterojunctions
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- 28 February 2011, 367
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Electrical Properties of n- and p-type In0.53Ga0.47As Layers Formed by Ion Implantation and Rapid Thermal(Flash)Anneal
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- 28 February 2011, 375
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Thermal Stability of Tasix-Gaas Schottky Barriers
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- 28 February 2011, 381
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Raman Scattering Study of the Au-Ge-Gaas Ohmic Contact Structure Formed by Rapid Thermal Processing
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- 28 February 2011, 387
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Diffusion of Zn into Gaas 0.6 P0.4:Te From Zn-Doped Oxide Films By Rapid Thermal Processing
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- 28 February 2011, 393
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Rapid Thermal Processing for High-Speed III-V Compound Devices
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- 28 February 2011, 401
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Co-Implantation of Si And Be in GaAs by Rapid Thermal Annealing
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- 28 February 2011, 411
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Rapid Thermal Processing of Silicon Ion Implanted Channel Layers in GaAs
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- 28 February 2011, 417
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Formation of Device Quality p-Type Layers in GaAs using Co-Implantation of Mg+ and As+ and Capless Rapid Thermal Annealing
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- 28 February 2011, 425
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Rapid Thermal Annealing of Se-Implanted Gallium Arsenide
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- 28 February 2011, 431
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