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The Effect of Rapid Thermal Treatment on the Structural and Optoelectronic Properties of Epitaxial Gaas on Si Grown With or Without Ge Intermediate Layers

  • El-Hang Lee (a1), M.Abdul Awal (a1), E. Y. Chan (a1), R. L. Opila (a2), D. C. Jacobson (a2) and S. J. Pearton (a2)...

Abstract

Characteristics of MOCVD GaAs grown on Si are compared before and after a rapid thermal treatment. The GaAs-on-Si samples were prepared both with and without a Ge intermediate layer, which is used to accomodate mismatches of lattice, thermal and chemical origin between GaAs and Si. Structural, interfacial, chemical, and electrical changes have been examined. RBS and Raman characterization showed improvement of GaAs crystallinity after RTA. In most cases, the interfaces were found to become sharper after RTA, but chemical interdiffusion was observed to cause some effect on the structural and electrical properties. For gold-contacted GaAs, RTA seems to degrade the electrical and optoelectronic properties via gold interdiffusion into GaAs. Comparative studies of the GaAs/Si and GaAs/Ge/Si samples suggests that the two respond somewhat differently to RTA.

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[1] See, for example, (a) Heteroepitaxy on Si, edited by Fan, J.C.C. and Poate, J.M., Mater. Res. Soc. Symp. Proc., Vol. 67 (1986);
1a or (b) Heteroepitaxy on Si Technology, edited by Fan, J.C.C., Phillips, J.M., and Tsaur, B.Y., Mater. Res. Soc. Symp. Proc., MRS Spring Meeting, April 21–25, 1987, Anaheim, CA.
[2] Awal, M. A., Lee, E. H., Chan, E. Y., Koos, G. L., Celler, G. K. and Sheng, T. T., Mater. Res. Soc. Symp. Proc., 67, 93 (1986).
[3] Lee, E. H., Awal, M. A. and Chan, E. Y., Proceedings of the International Solid State Devides and Materials Conference, pp.121–125 (1986). SSDM, August 23–25, 1986, Tokyo, Japan.
[4] See, for example, (a) Mater. Res. Soc. Symp. Proc., 23, North Holland, 1984.
4b (Section on Rapid Thermal Processing or Transient Thermal Processing.); or (b) Mater. Res. Soc. Symp. Proc.: Rapid Thermal Processing, 52 (MRS, 1986).
[5] Awal, M. A., Lee, E. H., Chan, E. Y., Lum, R. M., Klingert, J. K., Sheng, T. T., Jacobson, D. C. and Opila, R. L., Mater. Res. Soc. Symp. Proc.: Heteroepitaxy on Si Technology, MRS Spring Meeting, April 21–25, 1987, Anaheim, CA.
[6] Cho, N. H., McKernan, S., Carter, C. B., De Cooman, B. C. and Wagner, D. K., Mater. Res. Soc. Symp. Proc.: Heteroepitaxy on Silicon Technology, (MRS Spring Meeting, April 21–25, 1987, Anaheim, CA).
[7] Dupuis, R. D. (Private communication)
[8] Chand, N., Fischer, R. and Cho, A. Y., Mater. Res. Soc. Syrnp. Proc.: Heteroepitaxy on Silicon Technology, (MRS Spring Meeting, April 21–25, 1987, Anaheim, CA).
[9] Liliental-Weber, Z., Newman, N., Spicer, W. E., Gronsky, R., Washburn, J. and Weber, E. R., Mater. Res. Soc. Symp. Proc., 54, 415 (1986).
[10] Newman, N., Petro, G. W., Kendelewicz, T., Pan, S. H., Eglash, S. J., and Spicer, W. E., J. Appl. Phys., 57, 1247 (1985).
[11] Awal, M. A. and Lee, E. H. (Unpublished results).

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