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Diffusion of Zn into Gaas 0.6 P0.4:Te From Zn-Doped Oxide Films By Rapid Thermal Processing

Published online by Cambridge University Press:  28 February 2011

A. Usami ,
Y. Tokuda ,
H. Shiraki ,
H. Ueda ,
T. Wada ,
H. Kan  and
T. Murakami
A. Usami
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya, Aichi 466, Japan
Y. Tokuda
Affiliation:
Department of Electronics, Aichi Institute of Technology, Toyota, Aichi 470–03, Japan
H. Shiraki
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya, Aichi 466, Japan
H. Ueda
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya, Aichi 466, Japan
T. Wada
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya, Aichi 466, Japan
H. Kan
Affiliation:
Hamamatsu Photonics KK, Hamamatsu, Shizuoka 435, Japan
T. Murakami
Affiliation:
Hamamatsu Photonics KK, Hamamatsu, Shizuoka 435, Japan
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Abstract

Rapid thermal processing using halogen lamps was applied to the diffusion of Zn into GaAs0.6 P0.4:Te from Zn-doped oxide films. The Zn diffusion coefficient of the rapid thermal diffused (RTD) samples at 800°C for 6 s was about two orders of magnitude higher than that of the conventional furnace diffused samples at 800°C for 60 min. The enhanced diffusion of Zn by RTD may be ascribed to the stress field due to the difference in the thermal expansion coefficient between the doped oxide films and GaAs0.6P0.4 materials, and due to the temperature gradient in GaAs0.6P0 4 materials. The Zn diffusion coefficient at Zn concentration of 1.0 × l018 cm−3 was 3.6 × 10−11, 3.1 × 10−11 and 5.0 × 10−12 cm2 /s for the RTD samples at 950°C for 6 s from Zn-, (Zn,Ga)- and (Zn,P)-doped oxide films, respectively. This suggests that Zn diffusibility was controlled by the P in the doped oxide films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 393
Copyright
Copyright © Materials Research Society 1987

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References

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