Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-18T16:25:03.045Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Thermal Annealing of Amorphous Hydrogenated Carbon (a-C:H) Films

Published online by Cambridge University Press:  28 February 2011

Samuel A. Alterovitz ,
John J. Pouch  and
Joseph D. Warner
Samuel A. Alterovitz
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
John J. Pouch
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
Joseph D. Warner
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
Get access

Abstract

Amorphous hydrogenated carbon (a-C:H) films were deposited on silicon and quartz substrates by a 30 kHz plasma discharge technique using methane. Rapid thermal processing of the films was accomplished in nitrogen gas using tungsten halogen light. The rapid thermal processing was done at several fixed temperatures (up to 600°C), as a function of time (up to 1800 sec). The films were characterized by optical absorption and by ellipsometry in the near UV and the visible. The bandgap, estimated from extrapolation of the linear part of a Tauc plot, decreases both with the annealing temperature and the annealing time, with the temperature dependence being the dominating factor. The density of states parameter increases up to 25 percent and the refractive index changes up to 20 percent with temperature increase. Possible explanations of the mechanisms involved in these processes are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 311
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Williams, J.S. and Pearton, S.J., in Energy Beam-Solid Interactions and Transient Thermal Processing/1984, Biegelson, D.K., Rozgonyi, G.A. and Shank, C.V., eds., Materials Research Society, Pittsburgh, PA, p. 427 (1985).Google Scholar
2. Johnson, N.M., in Energy Beam-Solid Interactions and Transient Thermal Processing/1984, Biegelson, D.K., Rozgonyi, G.A. and Shank, C.V., eds., Materials Research Society, Pittsburgh, PA, p. 265 (1985).Google Scholar
3. Yasuami, S., Saito, Y., and Hojo, A., Jpn. 3. Appl. Phys. 23, 379 (1984).Google Scholar
4. Faith, T.J. and Wu, C.P., Appl. Phys. Lett. 45, 470 (1984).Google Scholar
5. Weinberg, Z.A., Young, D.R., Calise, J.A., Cohen, S.A., DeLuca, J.C., and Deline, V.R., Appl. Phys. Lett. 45, 1204 (1984).Google Scholar
6. Lamb, J.D. and Woollam, J.A., J. Appl. Phys. 57, 5420 (1985).Google Scholar
7. Oh, J.E., Lamb, J.D., Snyder, P.G., Woollam, J.A., and Liu, D.C., Solid State Electronics 29, 933 (1986).Google Scholar
8. Alterovitz, S.A., Warner, J.D., Liu, D.C., and Pouch, J.J., J. Electrochem. Soc. 133, 2339 (1986).Google Scholar
9. Model 2106 made by Process Products Corp.Google Scholar
10. Mott, N.F. and Davis, E.A., Electronic Processes in Non-Crystalline Materials, 2nd ed., Clarendon Press, Oxford, p. 289 (1979).Google Scholar
11. Alterovitz, S.A., Bu-Abbud, G.H., Woollam, J.A., and Liu, D.C., J. Appl. Phys., 54, 1559 (1983).Google Scholar
12. Prawer, S., Kalish, R., and Adel, M., Appl. Phys. Lett. 48, 1585 (1986).Google Scholar
13. Robertson, J., Adv. Phys. 35, 317 (1986).Google Scholar
14. Angus, J.C., Koidl, P., and Domitz, S., Plasma Deposited Thin Films, Mort, J. and Jansen, F., eds., CRC Press, Boca Raton, p. 89 (1986).Google Scholar
15. Smith, F.W., J. Appl. Phys. 55, 764 (1984).Google Scholar