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Raman Scattering Study of the Au-Ge-Gaas Ohmic Contact Structure Formed by Rapid Thermal Processing

Published online by Cambridge University Press:  28 February 2011

D. Kirillov  and
Y. Chung
D. Kirillov
Affiliation:
Varian Research Center, 611 Hansen Way, Palo Alto, Ca 94303
Y. Chung
Affiliation:
Varian Research Center, 611 Hansen Way, Palo Alto, Ca 94303
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Abstract

Raman Scattering Was Used To Obtain New Information on the formation of Au-Ge-GaAs alloyed ohmic contacts. During alloying, we observe that amorphous Ge is transfoplmed into polycrystalline material. When Ge diffuses into the GaAs, no n+-GaAs layer is formed. Due to the intermixing of layers, both GaAs and Ge had a large number of impurities which formed deep electronic states in the forbidden gap. Electronic light scattering involving these states was observed. While several models for the Au-Ge-GaAs ohmic contact have been proposed, the model consistent with our Raman data includes resonant tunneling assisted by impurity levels in the graded Au-Ge-GaAs heterojunction structure as a basic conduction mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 387
Copyright
Copyright © Materials Research Society 1987

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References

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