Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-19T13:43:54.940Z Has data issue: false hasContentIssue false
  • English
  • Français

Co-Implantation of Si And Be in GaAs by Rapid Thermal Annealing

Published online by Cambridge University Press:  28 February 2011

Tan-Hua Yu  and
Sujane Wang
Tan-Hua Yu
Affiliation:
General Electric Company, Electronics Laboratory, Electronics Parkway, Syracuse, New York 13221
Sujane Wang
Affiliation:
General Electric Company, Electronics Laboratory, Electronics Parkway, Syracuse, New York 13221
Get access

Abstract

A buried p-layer in GaAs MESFET channel is successfully formed by (Si,Be) co-implantation and rapid thermal annealing process. The annealing cycle is optimized to activate Si and Be simultaneously and to minimize the dopant redistribution for precise dopant control. As a result, more than 80% activation efficiency for both Si and Be, as well as the greatly improved doping abruptness from 85 nm/decade to 65 nm/decade are achieved. Devices are fabricated and superior performance including sharper pinchoff, an increase of RF gain by 2–3dB and a 40% decrease in backgating effect is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 411
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yamasaki, K., Kato, N. and Hirayama, M., Electron. Lett, 20, 1029 (1984).Google Scholar
2. Yamasaki, K., Kato, N. and Hirayama, M., IEEE Trans. Electron Devices, ED-32, 2420 (1985).Google Scholar
3. Umemoto, Y., Takahashi, S., Matsunaga, N., and Nakamura, M., Electron. Lett., 20, 98 (1984).Google Scholar
4. Canfield, P. and Forbes, L., IEEE Trans. Electron Devices, ED-33, 925 (1986).Google Scholar
5. Canfield, P., Medinger, J. and Forbes, L., IEEE Electron Device Lett., EDL-8, 88 (1987).Google Scholar
6. Macksey, H.M., Brehm, G.E. and Mattenson, S.E., IEEE Electron Devices Lett., EDL-8, 116 (1987).Google Scholar
7. Yu, T-H., Kong, W.M., Lester, L.F., Smith, P.M., Duh, K.H.G., and Hwang, J.C.M., Mater. Res. Soc. Symp. Proc., 52, 417 (1985).Google Scholar
8. Jacobson, D.C., Pearton, S.J., Hull, R., Poate, J.M. and Williams, J.S., Mater. Res. Soc. Symp. Proc., 52, 361 (1985).Google Scholar
9. Wang, S.C., Unpublished work.Google Scholar