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Rapid Thermal Annealing of Se-Implanted Gallium Arsenide

Published online by Cambridge University Press:  28 February 2011

T. Inada ,
K. Miyamoto  and
A. Nishida
T. Inada
Affiliation:
College of Engineering, Hosei University, Kajino-cho, Koganei, Tokyo 184, Japan
K. Miyamoto
Affiliation:
College of Engineering, Hosei University, Kajino-cho, Koganei, Tokyo 184, Japan
A. Nishida
Affiliation:
College of Engineering, Hosei University, Kajino-cho, Koganei, Tokyo 184, Japan
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Extract

Rapid thermal annealing by using a graphite strip heater has been employed to activate Se atoms implanted in either In-doped or undoped LEC GaAs. Doping profile measurements have shown that highly doped n-type layers with the maximum carrier concentration of 1.2E19/cm3 are formed in the In-doped GaAs implanted with 100keV Se ions at room temperature after rapid thermal annealing at 1000°C for 10 sec. Residual defects existing in Se-implanted layers have been examined. The results show that the introduction of dislocations into Se-implanted layers during post-implant annealing is minimized in the In-doped GaAs samples treated by rapid thermal annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 431
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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