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7 - Graphene and 2D crystal tunnel transistors

from Section II - Tunneling devices

Published online by Cambridge University Press:  05 February 2015

By
Qin Zhang ,
Pei Zhao ,
Nan Ma ,
Grace (Huili) Xing  and
Debdeep Jena
Edited by
Tsu-Jae King Liu  and
Kelin Kuhn
Qin Zhang
Affiliation:
University of Notre Dame
Pei Zhao
Affiliation:
University of Notre Dame
Nan Ma
Affiliation:
University of Notre Dame
Grace (Huili) Xing
Affiliation:
University of Notre Dame
Debdeep Jena
Affiliation:
University of Notre Dame
Tsu-Jae King Liu
Affiliation:
University of California, Berkeley
Kelin Kuhn
Affiliation:
Cornell University, New York
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Summary

What is a low-power switch?

Transistors in the traditional field effect geometry operate by the injection of mobile carriers – electrons or holes – from a source reservoir to the drain reservoir through a conducting channel region. The carriers enter the channel region by surmounting an electrostatic potential barrier. The gate electrode controls the height of this barrier capacitively. The carriers in the source reservoir are in thermal equilibrium with the source contact. This means that the carriers, say electrons, are distributed in energy in the conduction band according to the Fermi–Dirac distribution f(E = 1/1[1+exp((E − EF)/kT)]. The Maxwell–Boltzmann approximation f(E) ~ exp[− E/kT] of the Fermi–Dirac distribution for large energies represents the high-energy tail of the distribution. There are electrons in this tail with energy higher than the potential barrier; the gate cannot stop them from being injected into the channel. This leads to a sub-threshold “leakage” drain current ID ~ exp[qVGS / kT], which leads to the well-known sub-threshold slope (S) requirement of S ~ (kT / q)ln10 ~ 60 mV/dec change of current. Methods to make the SS steeper than the 300 K value of 60 mV/dec value are expected to substantially lower the power dissipation in digital logic and computation [1, 2]. The methods must explore novel mechanisms of charge transport, or of electrostatic gating. This chapter focuses on transport.

The high-energy tail of electrons exists because of the available density of states (DOS) DC(E) of the conduction band; the electron distribution in energy is n(E) = DC(E)f(E). If the DOS were cut off, there would be no tail, and it is possible to obtain S less than 60 mV/dec. This sort of energy filtering is possible if we replace the n-type source for electrons by a p-type source, which has a valence band maximum and zero DOS above. For injection into the channel of the n-FET, the electrons cannot undergo the traditional drift/diffusion process, but have to quantum mechanically tunnel through the bandgap. This energy-filtering scheme to achieve sub-60 mV/dec switching is the central idea behind the tunneling FET (or TFET).

Type
Chapter
Information
CMOS and Beyond
Logic Switches for Terascale Integrated Circuits
 , pp. 144 - 174
Publisher: Cambridge University Press
Print publication year: 2015

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