56 results
A model for the dynamics of polymers in laminar shear flows
-
- Journal:
- Journal of Fluid Mechanics / Volume 185 / December 1987
- Published online by Cambridge University Press:
- 21 April 2006, pp. 503-522
-
- Article
- Export citation
Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 764 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, C4.1
- Print publication:
- 2003
-
- Article
- Export citation
Wide Bandgap Materials for Semiconductor Spintronics
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 799 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Z9.6
- Print publication:
- 2003
-
- Article
- Export citation
Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on Gan by Plasma Assisted Gas Source Molecular Beam Epitaxy
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L3.60
- Print publication:
- 2002
-
- Article
- Export citation
Ferromagnetic and Paramagnetic Semiconductors Based upon GaN, AlGaN, and GaP
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 690 / 2001
- Published online by Cambridge University Press:
- 17 March 2011, F1.5
- Print publication:
- 2001
-
- Article
- Export citation
Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (Mombe) and Solid Source Molecular Beam Epitaxy (SSMBE)
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 824-830
- Print publication:
- 2000
-
- Article
-
- You have access
- HTML
- Export citation
Luminescence from Erbium-Doped Gallium Nitride Thin Films
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 926-932
- Print publication:
- 1999
-
- Article
-
- You have access
- HTML
- Export citation
Rapid Thermal Processing of Implanted GaN up to 1500°C
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 671-677
- Print publication:
- 1999
-
- Article
-
- You have access
- HTML
- Export citation
Selective Dry Etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP Systems
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 573 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 281
- Print publication:
- 1999
-
- Article
- Export citation
Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitaxy
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 952-961
- Print publication:
- 1999
-
- Article
-
- You have access
- HTML
- Export citation
Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.65
- Print publication:
- 1999
-
- Article
- Export citation
Ultra-High Implant Activation Efficiency In GaN Using Novel High Temperature RTP System
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 463
- Print publication:
- 1998
-
- Article
- Export citation
Growth and Luminescence Properties of III-N:Er Materials Doped During Chemical Beam Epitaxy
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 510 / January 1998
- Published online by Cambridge University Press:
- 10 February 2011, 325
- Print publication:
- January 1998
-
- Article
- Export citation
The Role of the In Source IN InN Growth from Molecular Beams
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 525
- Print publication:
- 1998
-
- Article
- Export citation
Rapid Thermal Processing of Implanted GaN Up to 1500°C
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.33
- Print publication:
- 1998
-
- Article
- Export citation
Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitaxy
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, G11.6
- Print publication:
- 1998
-
- Article
- Export citation
Luminescence from Erbium-Doped Gallium Nitride Thin Films
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, G11.1
- Print publication:
- 1998
-
- Article
- Export citation
ICP Dry Etching of III-V Nitrides
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 393
- Print publication:
- 1997
-
- Article
- Export citation
Development of GaN and InGaN Gratings by Dry Etching
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 379
- Print publication:
- 1997
-
- Article
- Export citation
Hydrogen Passivation Of Er-Doped AIN
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 483 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 169
- Print publication:
- 1997
-
- Article
- Export citation