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Selective Dry Etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP Systems

  • D. C. Hays (a1), C. R. Abernathy (a1), W. S. Hobson (a2), S. J. Pearton (a1), J. Han (a3), R. J. Shul (a3), H. Cho (a1), K. B. Jung (a1), F. Ren (a4) and Y. B. Hahn (a1)...

Abstract

Selective etching of InN over GaN and AlN, and of GaAs over both AlGaAs and InGaP was examined with a number of different plasma chemistries under inductively coupled plasma conditions. Selectivities up to 55 for InN/GaN and 20 for InN/AlN were achieved in IC1/Ar discharges. For GaAs/AlGaAs, maximum selectivities of 75(with BCl3/SF6) were obtained while for GaAs/InGaP values of 80(with BCl3/SF6) and 25(with BCl3/NF3) were achieved. Selective etching of InGaP over GaAs is possible with either CH4/H2 or BI3. The selectivity is a strong function of ion flux and ion energy, and can result from two factors – either formation of a nonvolatile etch product, or a difference in bond strength between the two materials.

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Selective Dry Etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP Systems

  • D. C. Hays (a1), C. R. Abernathy (a1), W. S. Hobson (a2), S. J. Pearton (a1), J. Han (a3), R. J. Shul (a3), H. Cho (a1), K. B. Jung (a1), F. Ren (a4) and Y. B. Hahn (a1)...

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