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Rapid Thermal Processing of Implanted GaN up to 1500°C

  • X. A Cao (a1), S. J. Pearton (a1), R. K. Singh (a1), C. R. Abernathy (a1), J. Han (a2), R. J. Shul (a2), D. J. Rieger (a2), J. C. Zolper (a3), R. G. Wilson (a4), M. Fu (a5), J. A. Sekhar (a5), H. J. Guo (a5) and S. J. Pennycook (a6)...

Abstract

GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 °C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are ≤2 × 10−13 cm2. s−1 at 1400 °C, except Be, which displays damage-enhanced diffusion at 900 °C and is immobile once the point defect concentration is removed. Activation efficiency of ∼90% is obtained for Si at 1400 °C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500 °C compared to previous results at 1100 °C. There is minimal interaction of the sputtered AlN with GaN under our conditions, and it is readily removed selectively with KOH.

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Footnotes

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MRS Internat J. Nitride Semicond. Res. 4S1, G6.33(1999)

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References

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