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Rapid Thermal Processing of Implanted GaN Up to 1500°C

Published online by Cambridge University Press:  15 February 2011

X. A. Cao ,
S. J. Pearton ,
R. K. Singh ,
C. R. Abernathy ,
J. Han ,
R. J. Shul ,
D. J. Rieger ,
J. C. Zolper ,
R. G. Wilson  and
M. Fu
...Show all authors
X. A. Cao
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
R. K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
D. J. Rieger
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
J. C. Zolper
Affiliation:
Office of Naval Research, Arlington, VA 22217, USA
R. G. Wilson
Affiliation:
Consultant, Stevenson Ranch, CA 91381, USA
M. Fu
Affiliation:
Consultant, Stevenson Ranch, CA 91381, USA
J. A. Sekhar
Affiliation:
Micropyretics Heaters International, Inc. Cincinnati, OH 45215, USA
H. J. Guo
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 37831, USA
S. J. Pennycook
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 37831, USA
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Abstract

GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500°C using AIN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are ≤2×10-13 cm2 s-1 at 1400°C, except Be, which displays damage-enhanced diffusion at 900°C and is immobile once the point defect concentration is removed. Activation efficiency of ∼90% is obtained for Si at 1400°C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500°C compared to previous results at 1100°C. There is minimal interaction of the sputtered AIN with GaN under our conditions, and it is readily removed selectively with KOH.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.33
Copyright
Copyright © Materials Research Society 1999

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