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Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitaxy

  • U. Hömmerich (a1) (a2), J. T. Seo (a1), Myo Thaik (a1), J. D. MacKenzie (a3), C. R. Abernathy (a3), S.J. Pearton (a3), R.G. Wilson (a4) and J. M. Zavada (a5)...

Abstract

We are currently engaged in a systematic study of the optical properties of Er doped III-nitrides prepared by metalorganic molecular beam epitaxy (MOMBE). Under below-gap excitation it was observed that GaN: Er samples with [O]∼1020 cm−3 and [C]∼1021 cm−3 luminesce at 1540 nm with an intensity of more than two orders of magnitude greater than samples with low oxygen and carbon concentrations (< 1019 cm−3). Associated with the different oxygen and carbon concentrations were different thermal quenching behaviors and below-gap absorption bands. Interestingly, for above-gap excitation only small differences in absolute Er3+ PL intensity and quenching behavior were observed for samples of varying O and C content. Initial lifetime studies were performed and showed a rather unusual short decay time of ∼100 μs at room temperature. In order to gain more insight in the Er3+ PL, a comparison of the integrated PL intensity and lifetime was performed for the temperature range 15-500K. The result reveals that the Er3+ PL quenches above room temperature due to the onset of non-radiative decay and the reduction in excitation efficiency. All samples were also investigated for visible luminescence. Red luminescence was observed from GaN: Er on sapphire substrates under below-gap excitation.

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References

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