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Ferromagnetic and Paramagnetic Semiconductors Based upon GaN, AlGaN, and GaP

  • Mark E. Overberg (a1), Gerald T. Thaler (a1), Rachel M. Frazier (a1), Brent P. Gila (a1), Cammy R. Abernathy (a1), Stephen J. Pearton (a1), Nikoleta A. Theodoropoulou (a1), Stephen B. Arnason (a1), Arthur F. Hebard (a2) and Yun D. Park (a3)...

Abstract

Epitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4% Mn are found to be p-type with hysteretic behavior to room temperature. GaMnN films grown at 700 °C with 2.8% Mn show hysteresis at 300 K, while temperature-dependent magnetization measurements indicate that the magnetism may persist to much higher temperatures (> 325 K). Samples of AlGaMnN have also been prepared for the first time that show improved surface morphology compared to GaMnN but which show only paramagnetic behavior.

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