Skip to main content Accessibility help

Ferromagnetic and Paramagnetic Semiconductors Based upon GaN, AlGaN, and GaP

  • Mark E. Overberg (a1), Gerald T. Thaler (a1), Rachel M. Frazier (a1), Brent P. Gila (a1), Cammy R. Abernathy (a1), Stephen J. Pearton (a1), Nikoleta A. Theodoropoulou (a1), Stephen B. Arnason (a1), Arthur F. Hebard (a2) and Yun D. Park (a3)...


Epitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4% Mn are found to be p-type with hysteretic behavior to room temperature. GaMnN films grown at 700 °C with 2.8% Mn show hysteresis at 300 K, while temperature-dependent magnetization measurements indicate that the magnetism may persist to much higher temperatures (> 325 K). Samples of AlGaMnN have also been prepared for the first time that show improved surface morphology compared to GaMnN but which show only paramagnetic behavior.



Hide All
(1) Ohno, H., Science 281, p. 951 (1998).
(2) Munekata, H., Zaslavsky, A., Fumagalli, P., and Gambino, R. J., Appl. Phys. Lett. 63, p. 2929 (1993).
(3) Matukura, F., Abe, E., and Ohno, H., J. Appl. Phys. 87, p. 6442 (2000).
(4) Prinz, G., Science 282, p. 1660 (1998).
(5) Awschalom, D. D. and Kawakami, R. K., Nature 408, p. 923 (2000).
(6) Jonker, B. T., Park, Y. D., Bennett, B. R., Cheong, H. D., Kioseoglou, G., and Petrou, A., Phys. Rev. B 62, p. 8180 (2000).
(7) Zhu, H. J., Ramsteiner, M., Kostial, H., Wassermeier, M., Schönherr, H.-P., and Ploog, K. H., Phys. Rev. Lett. 87, p. 016601 (2001).
(8) Dietl, T., Ohno, H., Matsukara, F., Cibert, J., and Ferrand, D., Science 287, p. 1019 (2000).
(9) Lee, B., Jungwirth, T., and MacDonald, A. H., Phys. Rev. B 61, p. 15606 (2000).
(10) Berciu, M. and Bhatt, R. N., Phys. Rev. Lett 87, p. 107203–1 (2001).
(11) Gebicki, W., Strzeszewski, J., Kamler, G., Szyszko, T. and Podsliado, S., Appl. Phys. Lett. 76, p. 3870 (2000).
(12) Zajac, M., Doradzinski, R., Gosk, J., Szczyko, J., Lefeld-Sosnowska, M., Kaminska, M., Twardowski, A., Palczewska, M., Grzanka, E. and Gebicki, W., Appl. Phys. Lett. 78, p. 1276 (2001).
(13) Reed, M. L., El-Masry, N. A., Stadelmaier, H. H., Ritums, M. K., Reed, M. J., Parker, C. A., Roberts, J. C., and Bedair, S. M., Appl. Phys. Lett. 79, p. 3473 (2001).
(14) Nanoscale Magnetic Regions Formed in GaN Implanted with Mn,” Theodoropoulou, N., Lee, K.P., Overberg, M.E., Chu, S.N.G., Hebard, A.F., Abernathy, C.R., Pearton, S.J., and Wilson, R.G., J. Nanosci. Nanotech., 1, p. 101 (2001).
(15) Overberg, M. E., Abernathy, C. R., Pearton, S. J., Theodoropoulou, N. A., McCarthy, K. T. and Hebard, A. F., Appl. Phys. Lett. 79, p. 1312 (2001).
(16) Overberg, M. E., Gila, B. P., Abernathy, C. R., Pearton, S. J., Theodoropoulou, N. A., McCarthy, K.T., Arnason, S. B., and Hebard, A. F., Appl. Phys. Lett. 79, p. 3128, (2001).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed