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Scanning Near-Field Microwave Probe for In-line Metrology ofLow-K Dielectrics

Published online by Cambridge University Press:  17 March 2011

Vladimir V. Talanov ,
Robert L. Moreland ,
André Scherz ,
Andrew R. Schwartz  and
Youfan Liu
Vladimir V. Talanov
Affiliation:
Neocera, Inc., 10000 Virginia Manor Road, Beltsville, MD 20705, USA
Robert L. Moreland
Affiliation:
Neocera, Inc., 10000 Virginia Manor Road, Beltsville, MD 20705, USA
André Scherz
Affiliation:
Neocera, Inc., 10000 Virginia Manor Road, Beltsville, MD 20705, USA
Andrew R. Schwartz
Affiliation:
Neocera, Inc., 10000 Virginia Manor Road, Beltsville, MD 20705, USA
Youfan Liu
Affiliation:
Intel Assignee, International Sematech, Austin, TX 78741, USA
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Abstract

We have developed a novel microwave near-field scanning probe technique fornon-contact measurement of the dielectric constant of low-k films. Thetechnique is non-destructive, noninvasive and can be used on both porous andnon-porous dielectrics without any sample preparation. The probe has afew-micron spot size, which makes the technique well suited for real timelow-k metrology on production wafers. For dielectrics with k<4 theprecision and accuracy are better than 2% and 5%, respectively. Results forboth SOD and CVD low-k films are presented and show excellent correlationwith Hg-probe measurements. Results for k-value mapping on blanket 200mmwafers are presented as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F5.11
Copyright
Copyright © Materials Research Society 2004

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