Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-18T16:43:27.320Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of Temperature and Concentration on CopperDeposition Kinetics in Supercritical Carbon Dioxide

Published online by Cambridge University Press:  17 March 2011

Yinfeng Zong  and
James J. Watkins
Yinfeng Zong
Affiliation:
Department of Chemical Engineering, University of Massachusetts Amherst, Amherst, MA 01003
James J. Watkins
Affiliation:
Department of Chemical Engineering, University of Massachusetts Amherst, Amherst, MA 01003
Get access

Abstract

The kinetics of copper deposition by the hydrogen-assisted reduction ofbis(2,2,7- trimethyloctane-3,5-dionato)copper in supercritical carbondioxide was studied as a function of temperature and precursorconcentration. The growth rate was found to be as high as 31.5 nm/min.Experiments between 220 °C and 270 °C indicated an apparent activationenergy of 51.9 kJ/mol. The deposition kinetics were zero order with respectto precursor at 250 °C and 134 bar and precursor concentrations between0.016 and 0.38 wt.% in CO2. Zero order kinetics over this largeconcentration interval likely contributes to the exceptional step coverageobtained from Cu depositions from supercritical fluids.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F8.6
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Blackburn, J. M., Long, D. P., Cabanas, A., and Watkins, J. J., Science 294, 141–145 (2001).Google Scholar
2. Smart, N. G., Carleson, T., Kast, T., Clifford, A. A., Burford, M. D., and Wai, C. M., Talanta 44, 137–150 (1997).CrossRefGoogle Scholar
3. Lagalante, A. F., Hansen, B. M., Bruno, T. J., and Sievers, R. E., Inorg. Chem, 34, 5785 (1995).Google Scholar
4. Cross, W., Akgerman, A., and Erkey, C., Industrial & Engineering Chemistry Research 35, 1765–1770 (1996).CrossRefGoogle Scholar
5. Blackburn, J. M., PhD. Dissertation, University of Massachusetts Amherst, 2001.Google Scholar
6. Blackburn, J. M., Long, D. P., and Watkins, J. J., Chemistry of Materials 12, 2625–2631 (2000).CrossRefGoogle Scholar
7. Long, D. P., Blackburn, J. M., and Watkins, J. J., Advanced Materials 12, 913–915 (2000).3.0.CO;2-#>CrossRefGoogle Scholar
8. Watkins, J. J., Blackburn, J. M., and McCarthy, T. J., Chemistry of Materials 11, 213–215 (1999).Google Scholar
9. Cabanas, A., Long, D. P., Watkins, J. J., Chemistry of Materials (in press).Google Scholar
10. Lim, J. W., Mimura, K., and Isshiki, M., Applied Surface Science 217, 95–99 (2003).CrossRefGoogle Scholar
11. Kim, D. H., Wentorf, R. H., and Gill, W. N., Journal of the Electrochemical Society 140, 3267–3272 (1993).CrossRefGoogle Scholar
12. Chen, Y. D., Reisman, A., Turlik, I., and Temple, D., Journal of the Electrochemical Society 142, 3903–3911 (1995).CrossRefGoogle Scholar