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Pulsed MOCVD of Cu Seed Layer using a (Hfac)Cu(3,3-Dimethyl-1-Butene) Source Plus H2 Reactant

Published online by Cambridge University Press:  17 March 2011

Jaebum Park ,
Heejung Yang  and
Jaegab Lee
Jaebum Park
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea
Heejung Yang
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea
Jaegab Lee
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea, E-mail:, lgab@kookmin.ac.kr
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Abstract

Pulsed metalorganic chemical vapor deposition (MOCVD) of conformal copper seed layers, for the electrodeposition Cu films, has been achieved by an alternating supply of a Cu(I) source and H2 reactant at the deposition temperatures of 50 - 100°C. The Cu thickness increased proportionally to the number of cycle, and the growth rate was in the range of 3.5 to 8.2 A /cycle, showing the ability to control the nano-scale thickness. As-deposited films show highly smooth surfaces even for more than 100nm. In addition, about a 90% step coverage was obtained inside trenches, with an aspect ratio greater than 30:1. H2, introduced as a reactant gas, can play an active role in achieving highly conformal coatings, with increased grain sizes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F3.21
Copyright
Copyright © Materials Research Society 2004

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