Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-17T17:58:19.765Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal analysis studies of oxygen chemisorption on nanocrystalline SnO2

Published online by Cambridge University Press:  31 January 2011

C. H. Shek  and
G. M. Lin
C. H. Shek
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Tat chee Avenue, Kowloon, Hong Kong
G. M. Lin
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Tat chee Avenue, Kowloon, Hong Kong
Get access

Abstract

The oxygen chemisorption on nanocrystalline SnO2 at temperature range between 100 and 450 °C was studied with differential thermal analysis (DTA) and electrical conductivity measurement. The O2−, O−, and O2m ionosorptions were observed and could be distinguished from each other only on nanocrystalline SnO2 with grain size less than 5 nm. Assuming steady-state adsorption, the heats of adsorption for O2− and O− (or O2−) on nanocrystalline SnO2 are 1.09 and 1.50 eV respectively from the results of DTA.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 9 , September 2000 , pp. 1994 - 1997
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Nie, W.J., Adv. Mater. 5, 520 (1993).CrossRefGoogle Scholar
2.Watson, J., Ihokura, K., and Coles, G.S., Meas. Sci. Technol. 4, 711 (1993).CrossRefGoogle Scholar
3.Egashira, M., in Proceedings of the Symposium on Chemical Sensors, 1987 Joint Congress, Electrochemical Societies of Japan and the U. S., Honolulu, October 1987, p. 39.Google Scholar
4.Iwamoto, M., in Proceedings of the 34th Meeting of the Japanese Association of Chemical Sensors, August 1989 (Electrochemical Society of Japan) p. 23.Google Scholar
5.Hozer, L., Semiconductor Ceramics: Grain Boundary Effects (Ellis Horwood, New York, 1994), Chap. 2, p. 32.Google Scholar
6.Sberveglieri, G., Coccoli, G., Benussi, P., Groppelli, S., and Nelli, P., Appl. Surf. Sci. 40, 169 (1989).CrossRefGoogle Scholar
7.Castro, M.S., Aldao, C.M., J. Eur. Ceram. Soc. 20, 303 (2000).Google Scholar
8.Shek, C.H., Lai, J.K.L, and Lin, G.M., J. Phys. Chem. Solids 60, 189 (1999).Google Scholar
9.Warren, B.E., X-ray Diffraction (Addison-Wesley, Reading. MA, 1969) p. 253.Google Scholar
10.Linderoth, G., Thorpe, S.J., and Aust, K.T., Scripta Metall. Mater. 24, 1347 (1990).Google Scholar
11.Lin, G.M., Yang, H., Zhou, G.F., and Zhang, J.X., J. Transduction Technol. 9, 50 (1996) (in Chinese).Google Scholar
12.Wartnaby, C.E., Stuck, A., Yeo, Y.Y., and King, D.A., J. Phys. Chem. 100, 12483 (1996).Google Scholar
13.Masel, R.I., Principles of Adsorption and Reaction on Solid Surface (John Wiley, New York, 1996), p. 518.Google Scholar
14.Redhead, P.A., Vacuum 12, 203 (1963).Google Scholar
15.Rantala, T.S., Golovanov, V., and Lantto, V., Sens. Actuators, B 24–25, 532 (1995).Google Scholar