Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-17T19:38:48.877Z Has data issue: false hasContentIssue false
  • English
  • Français

Interface structure of face-centered-cubic-Ti thin film grown on 6H–SiC substrate

Published online by Cambridge University Press:  31 January 2011

Y. Sugawara ,
N. Shibata ,
S. Hara  and
Y. Ikuhara
Y. Sugawara
Affiliation:
Research and Development Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
N. Shibata
Affiliation:
Research and Development Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
S. Hara
Affiliation:
Materials Science Division, Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Y. Ikuhara
Affiliation:
Engineering Research Institute, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
Get access

Abstract

A titanium thin film was deposited on the flat (0001) face of a 6H–SiC by electron beam evaporation at room temperature in a vacuum of 5.1 × 10−8 Pa. The Ti film was epitaxially grown on the surface, and the interface between Ti and SiC was characterized by high-resolution electron microscopy. It was found that the structure of the deposited titanium is face-centered cubic (fcc), although bulk titanium metal usually has a hexagonal close-packed or body-centered cubic crystal structure. We believe that the unusual fcc structure of Ti thin film is due to the high adhesion of the film to the substrate and the high degree of coherency between them. The orientation relationship of the fcc-Ti/6H–SiC interface was (111)fcc-Ti//(0001)6H–SiC and [110]fcc-Ti//[1120]6H−SiC. Preliminary calculations indicate that this orientation relationship maximizes the lattice coherency across the interface.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 10 , October 2000 , pp. 2121 - 2124
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Rhoderick, E.H. and Williams, R.H., Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, United Kingdom, 1988).Google Scholar
2. Mönch, W., Semiconductor surface and interfaces, 2nd ed. (Springer, Berlin, Germany, 1995).CrossRefGoogle Scholar
3. Ho, P.S., Tan, T.Y., Lewis, J.E., and Rubloff, G.W., J. Vac. Sci. Technol. 16, 1120 (1979).CrossRefGoogle Scholar
4. Cheung, N.W., and Mayer, J.W., Phys. Rev. Lett. 46, 671, (1981).CrossRefGoogle Scholar
5. Savage, D.E., and Legally, M.G., J. Vac. Sci. Technol. B 4, 943 (1986).CrossRefGoogle Scholar
6. Higashi, G.S., Chabal, Y.J., Trucks, G.W., and Raghavachari, K., Appl. Phys. Lett. 56, 656, (1990).CrossRefGoogle Scholar
7. Watanabe, S., Shigeno, M., and Nakayama, N., Jpn. J. Appl. Phys. 30, 3575 (1991).CrossRefGoogle Scholar
8. Fan, J.F., Oigawa, H., and Nannichi, Y., Jpn. J. Appl. Phys. 27, L2125 (1988).Google Scholar
9. Hara, S., Teraji, T., Okushi, H., and Kajimura, K., Appl. Surf. Sci. 117/118, 394 (1997).CrossRefGoogle Scholar
10. E.g.: Metal-Ceramic Interfaces, edited by Rühle, M., Evans, A.G., Ashby, M.F., and Hirth, J.P. (Pergamon Press, New York, 1990).Google Scholar
10. Ikuhara, Y. and Pirouz, P., Mater. Sci. Forum 207–209, 121 (1996).Google Scholar
11. Ikuhara, Y. and Pirouz, P., Microsc. Res. Tech. 40, 206 (1998).3.0.CO;2-S>CrossRefGoogle Scholar
12. Stemmer, S., Pirouz, P., Ikuhara, Y., and Davis, R.F., Phys. Rev. Lett. 77, 1797 (1996).CrossRefGoogle Scholar
13. Pirouz, P., Ernst, F., and Ikuhara, Y., Solid State Phenom. 59–60, 51 (1998).CrossRefGoogle Scholar
14. Porter, L.M., Davis, R.F., Bow, J.S., Kim, M.J., Carpenter, R.W., and Glass, R.C., J. Mater. Res. 10, 668 (1995).CrossRefGoogle Scholar
15. Sugawara, Y., Shibata, N., Hara, S., and Ikuhara, Y. (unpublished).Google Scholar
16. Saleh, A.A., Shutthanandan, V., Shivaparann, R., Smith, R.J., Tran, T.T., and Chambers, S.A., J. Phys. Rev. B 56, 9841 (1997).Google Scholar
17. Marcus, P.M. and Jona, F., J. Phys. Condens. Matter 9, 6241 (1997).Google Scholar
18. Shechtman, D., van Heerden, D., and Josell, D., Mater. Lett. 20, 329 (1994).CrossRefGoogle Scholar
19. Josell, D., Shechtman, D., and van Heerden, D., Mater. Lett. 22, 275 (1995).Google Scholar