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Impacts of postannealing ambient atmospheres on Pt/SrBi2.2Ta2O9/Pt capacitors

Published online by Cambridge University Press:  31 January 2011

Ai-Dong Li ,
Tao Yu ,
Hui-Qin Ling ,
Di Wu ,
Zhi-Guo Liu  and
Nai-Ben Ming
Ai-Dong Li
Affiliation:
Materials Science and Engineering Department, Nanjing University, Nanjing 210093, People's Republic of China; National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
Tao Yu
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
Hui-Qin Ling
Affiliation:
Materials Science and Engineering Department, Nanjing University, Nanjing 210093, People's Republic of China; National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
Di Wu
Affiliation:
Materials Science and Engineering Department, Nanjing University, Nanjing 210093, People's Republic of China; National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
Zhi-Guo Liu
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China; Center for Advanced Studies in Science and Technology of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
Nai-Ben Ming
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China; Center for Advanced Studies in Science and Technology of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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Abstract

SrBi2Ta2O9 (SBT) films were prepared on Pt/TiO2/SiO2/Si substrates at 750 °C in oxygen by the metalorganic decomposition method. SBT film capacitors were postannealed in Ar (N2) at 350–750 °C and then reannealed in O2 at 750 °C. Effects of annealing atmosphere on the structure, morphology, and ferroelectric properties have been investigated systematically. The composition analyses indicate Ar- or N2-annealing at 750 °C leads to Bi evaporation and oxygen loss. Above 550 °C 100% Ar or N2 postannealing, the remnant polarization decreases and the coercive field increases significantly. The subsequent O2 recovery can hardly rejuvenate the electrical properties. The result is different from that with the effective O2 recovery in forming gas processing (annealing in an atmosphere containing 5% hydrogen). The possible origin and mechanism is discussed and proposed.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 12 , December 2001 , pp. 3526 - 3535
Copyright
Copyright © Materials Research Society 2001

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