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A discussion of the chemical mixing process for in situ preparation of silicon carbide whiskers in silicon nitride powder

Published online by Cambridge University Press:  31 January 2011

Shigehiko Yamada
Affiliation:
Osaka University, Institute of Science and Industrial Research, 8-1 Mihogaoka Idaraki, Osaka 567, Japan
Shiushichi Kimura
Affiliation:
Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, Yokohama 227, Japan
Yasuda Eiichi
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama 227, Japan
Yasuhiro Tanabe
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama 227, Japan
Yuuichi Asami
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama 227, Japan
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Abstract

To produce a homogeneous composite of silicon carbide whiskers in a silicon nitride matrix, the whiskers were formed in situ. The resulting bulk density was higher than that obtained by a physical mixing of the components using a dispersion procedure. Bending strength at room temperature of the in situ formed composite was about the same as that for the physically mixed composite when the small amount of carbon remaining in the in situ formed composite was removed.

Type
Articles
Copyright
Copyright © Materials Research Society 1988

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References

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