19 results
InGaN Thin Films Grown by ENABLE and MBE Techniques on Silicon Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1068 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1068-C06-02
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- 2008
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Transmission electron microscopy study of epitaxial InN thin films grown on c-plane sapphire
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- Journal:
- Journal of Materials Research / Volume 21 / Issue 7 / July 2006
- Published online by Cambridge University Press:
- 01 July 2006, pp. 1693-1699
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- July 2006
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Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 864 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, E7.10
- Print publication:
- 2005
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Electron Transport Properties of InN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF06-06
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- 2005
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Carrier Recombination, Relaxation, and Transport Dynamics in InN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF06-05
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- 2005
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Ultrafast All-optical Switches Based on Intersubband Transitions in GaN/AlN Multiple Quantum Wells for Tb/s Operation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E7.3
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- 2004
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Time Resolved Photoluminescence of Si-doped High Al Mole Fraction AlGaN Epilayers Grown by Plasma-Enhanced Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y5.45
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- 2003
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Emission Mechanisms in UV Emitting GaN/AlN Multiple Quantum Well Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y10.5
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- 2003
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Growth of non-polar a-plane and cubic InN on r-plane sapphire by molecular beam epitaxy
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- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y12.6
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- 2003
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Pressure Dependence of Optical Transitions in In-rich Group III-Nitride Alloys
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y12.9
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- 2003
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Growth of Thick InN by Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L4.10
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- 2002
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Molecular Beam Epitaxial Growth of AlN/GaN Multiple Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L6.2
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- 2002
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Room-Temperature Time–Resolved Photoluminescence Studies of UV Emission from GaN/AlN Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L11.14
- Print publication:
- 2002
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Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I1.5.1
- Print publication:
- 2001
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Preparation of InN and InN-Based Heterostructures by Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 680 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, E3.2
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- 2001
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Evidence From EELS of Oxygen in the Nucleation Layer of a MBE Grown III-N HEMT
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 188-194
- Print publication:
- 2000
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Polarization effects in AlxGa1−xN / GaN superlattices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G11.1
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- 2000
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Evidence from EELS of Oxygen in the Nucleation Layer of a MBE grown III-N HEMT
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W3.31
- Print publication:
- 1999
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Characterization of Grain Boundaries in Polycrystalline GaAs
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- MRS Online Proceedings Library Archive / Volume 5 / 1981
- Published online by Cambridge University Press:
- 15 February 2011, 125
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- 1981
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