Skip to main content Accessibility help
×
Home

Growth of Thick InN by Molecular Beam Epitaxy

  • Hai Lu (a1), William J. Schaff (a1), Lester F. Eastman (a1), J. Wu (a2), Wladek Walukiewicz (a2), David C. Look (a3) and Richard J. Molnar (a4)...

Abstract

In this study, InN films with thickness up to 7.5 micron were prepared by molecular beam epitaxy (MBE) on (0001) sapphire and quasi-bulk GaN templates. Previously it has been challenging to grow InN film much beyond 1 micron because the growing surface tended to become rough. Techniques to overcome this limit have been developed. Various buffer techniques were used and compared to optimize the epitaxial growth. It was found that with increasing film thickness, Hall mobility will monotonically increase, while carrier concentration decreases. Hall mobility beyond 2100 cm2/Vs with carrier concentration close to 3×1017 cm−3 was obtained at room temperature. Compared with the lowest carrier concentration ∼2×1018 cm−3 obtained on thin InN films grown at the same condition, the conclusion is that impurities from the growth environment are not responsible for the high background doping of InN. Instead, some structural defects or substrate/buffer impurities may be the major source of the unintentional doping, which can be reduced by growing thicker films.

Some results on Mg and Be doping of InN will be reported as well. To date, all Mg and Be doping attempts have resulted in n-type material.

Copyright

References

Hide All
1. Lu, H., Schaff, W. J., Hwang, J., Wu, H., Goutam, K. and Eastman, L. F., Appl. Phys. Lett. 79, 1489 (2001).
2. Higashiwaki, M. and Matsui, T., Jpn. J. Appl. Phys. 41, L540 (2002).
3. Davydov, V. Yu., Klochikhin, A. A., Seisyan, R. P., Emtsev, V. V., Ivanov, S. V., Bechstedt, F., Furthmuller, J., Harima, H., Mudryi, A. V., Aderhold, J., Semchinova, O., and Graul, J., Phys. Stat. Solidi (b), 229, R1 (2002).
4. Wu, J., Walukiewicz, W., Yu, K. M., Auger, J. W. III, Haller, E. E., Lu, H., Schaff, W. J., Saito, Y. and Nanishi, Y., Appl. Phys. Lett. 80, 3967 (2002).
5. Matsuoka, T., Okamoto, H., Nakao, M. and Kurimoto, E., Appl. Phys. Lett. 81, 1246 (2002).
6. Manfra, M. J., Weimann, N. G., Hsu, J. W. P., Pfeiffer, L. N., West, K. W., Syed, S., Stormer, H. L., Pan, W., Lang, D. V., Chu, S. N. G., Kowash, G., Sergent, A. W., Caissie, J., Molvar, K. M., Mahoney, L. J. and Molnar, R. J., J. Appl. Phys. 92, 338 (2002).
7. Lu, H., Schaff, W. J., Hwang, J., Wu, H., Yeo, W., Pharkya, A., and Eastman, L. F., Appl. Phys. Lett. 77, 2548 (2000).
8. Look, D. C., Lu, H., Schaff, W. J., Jasinski, J. and Liliental-weber, Z., Appl. Phys. Lett. 80, 258 (2002),
9. Cai, J. and Ponce, F. A., Phys. Stat. Sol. (a), 192, 407 (2002).
10. Lu, H., Schaff, W. J., Hwang, J. and Eastman, L. F., MRS Spring Meeting (April 1620, 2001, San Francisco, CA). on Mater. Res. Soc. Symp. (2001), 680E, E3.2.

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed