- Cited by 16
Lu, Hai Schaff, William J. Eastman, Lester F. Wu, J. Walukiewicz, Wladek Cimalla, Volker and Ambacher, Oliver 2003. Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy. Applied Physics Letters, Vol. 83, Issue. 6, p. 1136.
Naoi, Hiroyuki Matsuda, Fumie Araki, Tsutomu Suzuki, Akira and Nanishi, Yasushi 2004. The effect of substrate polarity on the growth of InN by RF-MBE. Journal of Crystal Growth, Vol. 269, Issue. 1, p. 155.
Jain, Abhishek Raghavan, Srinivasan and Redwing, Joan M 2004. Evolution of surface morphology and film stress during MOCVD growth of InN on sapphire substrates. Journal of Crystal Growth, Vol. 269, Issue. 1, p. 128.
Wu, J. Walukiewicz, W. Li, S. X. Armitage, R. Ho, J. C. Weber, E. R. Haller, E. E. Lu, Hai Schaff, William J. Barcz, A. and Jakiela, R. 2004. Effects of electron concentration on the optical absorption edge of InN. Applied Physics Letters, Vol. 84, Issue. 15, p. 2805.
Tsen, K.T. Liang, W. Ferry, D.K. Lu, Hai Schaff, William J. Özgür, Ü. Fu, Y. Moon, Y.T. Yun, F. Morkoç, H. and Everitt, H.O. 2005. Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors. Superlattices and Microstructures, Vol. 38, Issue. 2, p. 77.
Monemar, B. Paskov, P.P. and Kasic, A. 2005. Optical properties of InN—the bandgap question. Superlattices and Microstructures, Vol. 38, Issue. 1, p. 38.
Chen, Fei Cartwright, A. N. Lu, H. and Schaff, W. J. 2005. Temperature dependence of carrier lifetimes in InN. physica status solidi (a), Vol. 202, Issue. 5, p. 768.
Tsen, K 2005. Non-Equilibrium Dynamics of Semiconductors and Nanostructures. p. 179.
Tsen, K. T. Ferry, D. K. Lu, H. and Schaff, W. J. 2006. Nonequilibrium Carrier Dynamics in Semiconductors. Vol. 110, Issue. , p. 143.
Valcheva, E. Alexandrova, S. Dimitrov, S. Lu, H. and Schaff, W. J. 2006. Recombination processes with and without momentum conservation in degenerate InN. physica status solidi (a), Vol. 203, Issue. 1, p. 75.
Tsen, K.T. Poweleit, C. Ferry, D.K. Lu, Hai and Schaff, William J. 2006. Optical studies of high-field carrier transport of InN thick film grown on GaN. Journal of Crystal Growth, Vol. 288, Issue. 2, p. 289.
Lebedev, V. Morales, F.M. Cimalla, V. Lozano, J.G. González, D. Himmerlich, M. Krischok, S. Schaefer, J.A. and Ambacher, O. 2006. Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy. Superlattices and Microstructures, Vol. 40, Issue. 4-6, p. 289.
Cimalla, V. Lebedev, V. Morales, F. M. Niebelschütz, M. Ecke, G. Goldhahn, R. and Ambacher, O. 2006. Origin of n-type conductivity in nominally undoped InN. Materialwissenschaft und Werkstofftechnik, Vol. 37, Issue. 11, p. 924.
Sugita, K. Nagai, Y. Houchin, Y. Hashimoto, A. and Yamamoto, A. 2007. Crystallographic deterioration of MOVPE InN during the growth. physica status solidi (c), Vol. 4, Issue. 7, p. 2461.
Yamamoto, Akio Sugita, Ken-ichi and Hashimoto, Akihiro 2009. Elucidation of factors obstructing quality improvement of MOVPE-grown InN. Journal of Crystal Growth, Vol. 311, Issue. 22, p. 4636.
Wang, H Wang, L L Sun, X Zhu, J H Liu, W B Jiang, D S Zhu, J J Zhao, D G Liu, Z S Wang, Y T Zhang, S M and Yang, H 2009. Suppression of indium droplet formation by adding CCl4during metalorganic chemical vapor deposition growth of InN films. Semiconductor Science and Technology, Vol. 24, Issue. 7, p. 075004.
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- Volume 743 (Symposium L – GaN and Related Alloys)
- 2002 , L4.10
In this study, InN films with thickness up to 7.5 micron were prepared by molecular beam epitaxy (MBE) on (0001) sapphire and quasi-bulk GaN templates. Previously it has been challenging to grow InN film much beyond 1 micron because the growing surface tended to become rough. Techniques to overcome this limit have been developed. Various buffer techniques were used and compared to optimize the epitaxial growth. It was found that with increasing film thickness, Hall mobility will monotonically increase, while carrier concentration decreases. Hall mobility beyond 2100 cm2/Vs with carrier concentration close to 3×1017 cm−3 was obtained at room temperature. Compared with the lowest carrier concentration ∼2×1018 cm−3 obtained on thin InN films grown at the same condition, the conclusion is that impurities from the growth environment are not responsible for the high background doping of InN. Instead, some structural defects or substrate/buffer impurities may be the major source of the unintentional doping, which can be reduced by growing thicker films.
Some results on Mg and Be doping of InN will be reported as well. To date, all Mg and Be doping attempts have resulted in n-type material.
Hide All1. Lu, H., Schaff, W. J., Hwang, J., Wu, H., Goutam, K. and Eastman, L. F., Appl. Phys. Lett. 79, 1489 (2001).2. Higashiwaki, M. and Matsui, T., Jpn. J. Appl. Phys. 41, L540 (2002).3. Davydov, V. Yu., Klochikhin, A. A., Seisyan, R. P., Emtsev, V. V., Ivanov, S. V., Bechstedt, F., Furthmuller, J., Harima, H., Mudryi, A. V., Aderhold, J., Semchinova, O., and Graul, J., Phys. Stat. Solidi (b), 229, R1 (2002).4. Wu, J., Walukiewicz, W., Yu, K. M., Auger, J. W. III, Haller, E. E., Lu, H., Schaff, W. J., Saito, Y. and Nanishi, Y., Appl. Phys. Lett. 80, 3967 (2002).5. Matsuoka, T., Okamoto, H., Nakao, M. and Kurimoto, E., Appl. Phys. Lett. 81, 1246 (2002).6. Manfra, M. J., Weimann, N. G., Hsu, J. W. P., Pfeiffer, L. N., West, K. W., Syed, S., Stormer, H. L., Pan, W., Lang, D. V., Chu, S. N. G., Kowash, G., Sergent, A. W., Caissie, J., Molvar, K. M., Mahoney, L. J. and Molnar, R. J., J. Appl. Phys. 92, 338 (2002).7. Lu, H., Schaff, W. J., Hwang, J., Wu, H., Yeo, W., Pharkya, A., and Eastman, L. F., Appl. Phys. Lett. 77, 2548 (2000).8. Look, D. C., Lu, H., Schaff, W. J., Jasinski, J. and Liliental-weber, Z., Appl. Phys. Lett. 80, 258 (2002),9. Cai, J. and Ponce, F. A., Phys. Stat. Sol. (a), 192, 407 (2002).10. Lu, H., Schaff, W. J., Hwang, J. and Eastman, L. F., MRS Spring Meeting (April 16–20, 2001, San Francisco, CA). on Mater. Res. Soc. Symp. (2001), 680E, E3.2.
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