Skip to main content Accessibility help

InGaN Thin Films Grown by ENABLE and MBE Techniques on Silicon Substrates

  • Lothar A. Reichertz (a1), Kin Man Yu (a2), Yi Cui (a3), Michael E Hawkridge (a4), Jeffrey W Beeman (a5), Zuzanna Liliental-Weber (a6), Joel W Ager III (a7), Wladyslaw Walukiewicz (a8), William J Schaff (a9), Todd L Williamson (a10) and Mark A. Hoffbauer (a11)...


The prospect of developing electronic and optoelectronic devices, including solar cells, that utilize the wide range of energy gaps of InGaN has led to a considerable research interest in the electronic and optical properties of InN and In-rich nitride alloys. Recently, significant progress has been achieved in the growth and doping of InGaN over the entire composition range. In this paper we present structural, optical, and electrical characterization results from InGaN films grown on Si (111) wafers. The films were grown over a large composition range by both molecular beam epitaxy (MBE) and the newly developed “energetic neutral atomic-beam lithography & epitaxy” (ENABLE) techniques. ENABLE utilizes a collimated beam of ∼2 eV nitrogen atoms as the active species which are reacted with thermally evaporated Ga and In metals. The technique provides a larger N atom flux compared to MBE and reduces the need for high substrate temperatures, making isothermal growth over the entire InGaN alloy composition range possible. Electrical characteristics of the junctions between n- and p-type InGaN films and n- and p-type Si substrates were measured and compared with theoretical predictions based on the band edge alignment between those two materials. The predicted existence of a low resistance tunnel junction between p-type Si and n-type InGaN was experimentally confirmed.



Hide All
[1] Wu, J. Walukiewicz, W. Yu, K.M. Ager, J.W. III, Haller, E.E. Lu, H. Schaff, W.J. Saito, Y. and Nanishi, Y. Appl. Phys. Lett. 80, 3967 (2002).
[2] Walukiewicz, W, Ager, J W III, Yu, K M, Liliental-Weber, Z, Wu, J, Li, S X, Jones, R E, and Denlinger, J D, J. Physics D 39, R85 (2006).
[3] Shockley, W. Queisser, H.J. J. Appl. Phys. 32, 510 (1961).
[4] Green, M.A. Third Generation Photovoltaics: Advanced Solar Energy Conversion, (1st ed. 2003. 2nd printing Berlin: Springer, 2006.) p. 59.
[5] Ager, J.W. III, Reichertz, L.A. Yamaguchi, D. Hsu, L. Jones, R.E. Yu, K.M. Walukiewicz, W. and Schaff, W.J. Group III-nitride alloys for multijunction solar cells, Proc. 22nd European Photovoltaic Solar Energy Conference and Exhibition, Milan, Italy (2007).
[6] Wu, Chung-Lin, Wang, Jhih-Chun, Chan, Meng-Hu, Chen, Tom T. and Gwo, Shangir, Appl. Phys. Lett. 83, 4530 (2003).
[7] Wu, C. L. Shen, C. H. Chen, H. Y. Tsai, S. J. Lin, H. W. Lee, H. M. Gwo, S. Chuang, T. F. Chang, H. S. Hsu, T. M. J. Crystal Growth 288, 247 (2006).
[8] Mueller, A.H. Akhadov, E.A. and Hoffbauer, M.A. Appl. Phys. Lett. 88, 041907 (2006).
[9] Lu, H. Schaff, W. J. Hwang, J. Wu, H. Koley, G. and Eastman, L.E. Appl. Phys. Lett. 79, 1489 (2001).



Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed