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Pressure Dependence of Optical Transitions in In-rich Group III-Nitride Alloys

Published online by Cambridge University Press:  01 February 2011

S. X. Li ,
J. Wu ,
W. Walukiewicz ,
W. Shan ,
E. E. Haller ,
Hai Lu  and
William J. Schaff
S. X. Li
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory Department of Materials Science and Engineering, University of California, Berkeley, California 94720
J. Wu
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory Department of Materials Science and Engineering, University of California, Berkeley, California 94720
W. Walukiewicz
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory
W. Shan
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory
E. E. Haller
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory Department of Materials Science and Engineering, University of California, Berkeley, California 94720
Hai Lu
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853
William J. Schaff
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853
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Abstract

The hydrostatic pressure dependence of the optical transitions in InN, In-rich In1-xGaxN (0 < x < 0.5) and In1-xAlxN (x = 0.25) alloys is studied using diamond anvil cells. The absorption edges and the photoluminescence peaks shift to higher energy with pressure. The pressure coefficient of InN is determined to be 3.0±0.1 meV/kbar. Together with previous experimental results, our data suggest that the pressure coefficients of group-III nitride alloys have only a weak dependence on the alloy composition. Photoluminescence gives much smaller pressure coefficients, which is attributed to emission involving highly localized states. This indicates that photoluminescence might not be an accurate method to study the pressure dependence of the fundamental bandgaps of group III-nitrides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y12.9
Copyright
Copyright © Materials Research Society 2004

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References

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