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Characterization of Grain Boundaries in Polycrystalline GaAs

  • Michael G. Spencer (a1), William J. Schaff (a2) and D. Ken Wagner (a2)

Abstract

Examination of capacitance transients arising from the emission or capture of electrons at a charged GaAs grain boundary reveal for the first time the existence of discrete interface levels. The position of these levels in the bandgap and their associated capture cross sections are determined from the transients.

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References

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4. Kirchner, P. D., Schaff, W. J., Maracus, G. N. and Eastman, L. F., to be published in J. Appl. Phys.
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