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Growth of non-polar a-plane and cubic InN on r-plane sapphire by molecular beam epitaxy

  • Hai Lu (a1), William J. Schaff (a1), Lester F. Eastman (a1), Volker Cimalla (a2), Joerg Pezoldt (a2), Oliver Ambacher (a2), J. Wu (a3) and Wladek Walukiewicz (a3)...

Abstract

Growth of non-polar III-nitrides has been an important subject recently due to its potential improvement on the efficiency of III-nitride-based opto-electronic devices. Despite study of non-polar GaN and GaN-based heterostructures, there are few reports on epitaxial growth of non-polar InN, which is also an important component of the III-nitride system. In this study, we report heteroepitaxial growth of non-polar InN on r-plane sapphire substrates using plasma-assisted molecular beam epitaxy. It is found that when a GaN buffer is used, the following InN film appears to be non-polar (1120) a-plane which follows the a-plane GaN buffer. The room temperature Hall mobility of undoped a-plane InN is around 250 cm2/Vs with a carrier concentration around 6×1018 cm-3. Meanwhile, if InN film is directly deposited on r-plane sapphire without any buffer, the InN layer is found to consist of a predominant zincblende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase with increasing content with proceeding growth.

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Growth of non-polar a-plane and cubic InN on r-plane sapphire by molecular beam epitaxy

  • Hai Lu (a1), William J. Schaff (a1), Lester F. Eastman (a1), Volker Cimalla (a2), Joerg Pezoldt (a2), Oliver Ambacher (a2), J. Wu (a3) and Wladek Walukiewicz (a3)...

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