Symposium DD – Silicon Carbide‒Materials, Processing and Devices
Articles
Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC
- Published online by Cambridge University Press: 04 June 2014, mrss14-1693-dd03-02
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Ohmic and rectifying contacts to n-SiC formed by energetic deposition of carbon
- Published online by Cambridge University Press: 10 June 2014, mrss14-1693-dd06-10
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Correlation of Stress in Silicon Carbide Crystal and Frequency Shift in Micro-Raman Spectroscopy
- Published online by Cambridge University Press: 13 June 2014, mrss14-1693-dd01-07
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4H-SiC P+N UV Photodiodes: Influence of Temperature and Irradiation
- Published online by Cambridge University Press: 10 June 2014, mrss14-1693-dd03-07
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Defect Reduction Paths in SiC Epitaxy
- Published online by Cambridge University Press: 11 June 2014, mrss14-1693-dd01-05
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Graphene Grown on Ion-Implanted 4H-SiC and an Effect of Pre-Plasma Treatment
- Published online by Cambridge University Press: 08 July 2014, mrss14-1693-dd06-11
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Patch antennas utilizing semi-insulating SiC for monolithic integration of the antenna subsystem on a SiC chip
- Published online by Cambridge University Press: 18 June 2014, mrss14-1693-dd06-09
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Developments of SiC DioMOS (Diode Integrated SiC MOSFET)
- Published online by Cambridge University Press: 03 June 2014, mrss14-1693-dd02-05
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Enhanced Forward Bias Operation of 4H-SiC PiN Diodes Using High Temperature Oxidation
- Published online by Cambridge University Press: 18 July 2014, mrss14-1693-dd06-17
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Revealing the electronic band structure of quasi-free trilayer graphene on SiC(0001)
- Published online by Cambridge University Press: 19 June 2014, mrss14-1693-dd07-01
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Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation
- Published online by Cambridge University Press: 04 June 2014, mrss14-1693-dd03-08
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CMOS Circuits on Silicon Carbide for High Temperature Operation
- Published online by Cambridge University Press: 17 June 2014, mrss14-1693-dd03-05
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High quality and high speed cutting of 4H-SiC JFET wafers including PCM structures by using Thermal Laser Separation
- Published online by Cambridge University Press: 10 June 2014, mrss14-1693-dd04-03
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Direct Observation of Stacking Fault Nucleation from Deflected Threading Dislocations with Burgers Vector c+a in PVT Grown 4H-SiC
- Published online by Cambridge University Press: 10 June 2014, mrss14-1693-dd01-04
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P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation
- Published online by Cambridge University Press: 17 June 2014, mrss14-1693-dd04-01
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Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface
- Published online by Cambridge University Press: 26 June 2014, mrss14-1693-dd02-04
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A novel 3C-SiC on Si power Schottky diode design and modelling
- Published online by Cambridge University Press: 10 June 2014, mrss14-1693-dd06-16
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Single Crystalline 4H-SiC MEMS Devices with N-P-N Epitaxial Structure
- Published online by Cambridge University Press: 18 June 2014, mrss14-1693-dd05-02
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Impact of growth parameters on the formation of carbon nanostructures through thermal deposition of silicon carbide
- Published online by Cambridge University Press: 10 June 2014, mrss14-1693-dd06-01
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New 3C Silicon Carbide on Silicon Hetero-Junction Solar Cells for UV Collection enhancement
- Published online by Cambridge University Press: 23 June 2014, mrss14-1693-dd08-04
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