Sharma, Y. K., Ahyi, A. C., Isaacs-Smith, T., Modic, A., Park, M., Xu, Y., et al. ., "High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer," Electron Device Letters, IEEE, vol. 34, pp. 175–177, 2013.
Hatta, N., Kawahara, T., Yagi, K., Nagasawa, H., Reshanov, S. A., and Schöner, A., "Reliable Method for Eliminating Stacking Fault on 3C-SiC (001)," in Materials Science Forum, 2012, pp. 173–176.
Bakowski, M., Schöner, A., Ericsson, P., Strömberg, H., Nagasawa, H., and Abe, M., "Development of 3C-SiC MOSFETs," Journal of Telecommunication and information Technology, vol. 2, 2007.
Uchida, H., Minami, A., Sakata, T., Nagasawa, H., and Kobayashi, M., "High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility," in Materials Science Forum, 2012, pp. 1109–1112.
Craig, F., Michael, J., Dean, H., Yogesh, S., Stephen, T., Fan, L., et al. ., "Enhanced Forward Bias Operation of 4H-SiC PiN Diodes Using High Temperature Oxidation," in 2014 MRS Spring Meeting & Exhibit, San Francisco, 2014.
Yakimova, R., Vasiliauskas, R., Eriksson, J., and Syväjärvi, M., "Progress in 3C-SiC growth and novel applications," in Materials Science Forum, 2012, pp. 3–10.
Shockley, W., "Problems related to p-n junctions in silicon," Solid-State Electronics, vol. 2, pp. 35–67, 1// 1961.
Nilsson, H. E., Englund, U., Hjelm, M., Bellotti, E., and Brennan, K., "Full band Monte Carlo study of high field transport in cubic phase silicon carbide," Journal of Applied Physics, vol. 93, pp. 3389–3394, 2003.
Caughey, D. M. and Thomas, R. E., "Carrier mobilities in silicon empirically related to doping and field," Proceedings of the IEEE, vol. 55, pp. 2192–2193, 1967.
Roschke, M. and Schwierz, F., "Electron mobility models for 4H, 6H, and 3C SiC," Electron Devices, IEEE Transactions on, vol. 48, pp. 1442–1447, 2001.
Raynaud, C., Tournier, D., Morel, H., and Planson, D., "Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices," Diamond and Related Materials, vol. 19, pp. 1–6, 1// 2010.
Boksteen, B., Hueting, R., Salm, C., and Schmitz, J., .