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Theoretical and experimental operating wavelength of GaAs/Al0.25Ga0.75As IR photodetectors

Published online by Cambridge University Press:  31 January 2009

A. Almaggoussi ,
A. Abounadi ,
H. Akabli ,
K. Zekentes  and
M. Androulaki
A. Almaggoussi*
Affiliation:
Équipe d'Étude des Matériaux Optoélectroniques (E.E.M.O.), LP2M2E F.S.T.G., BP 549 Marrakech, Morocco
A. Abounadi
Affiliation:
Équipe d'Étude des Matériaux Optoélectroniques (E.E.M.O.), LP2M2E F.S.T.G., BP 549 Marrakech, Morocco
H. Akabli
Affiliation:
Équipe d'Étude des Matériaux Optoélectroniques (E.E.M.O.), LP2M2E F.S.T.G., BP 549 Marrakech, Morocco
K. Zekentes
Affiliation:
Foundation for Research and Technology – Hellas (FORTH)/I.E.S.L Microelectronics, Research Group Vassilika Vouton, P.O. Box 1527, 71110 Heraklion, Crete, Greece
M. Androulaki
Affiliation:
Foundation for Research and Technology – Hellas (FORTH)/I.E.S.L Microelectronics, Research Group Vassilika Vouton, P.O. Box 1527, 71110 Heraklion, Crete, Greece
*
almaggoussi@menara.ma
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Abstract

IR photodetectors based on GaAs/Al0.25Ga0.75As multiquantum wells (QWIP) grown by molecular beam epitaxy (MBE) are studied. The envelop function formalism is used to determine the theoretical intersubband transition energies. The electronic states are calculated in both parabolic and non parabolic cases. IR spectroscopy transmission is used as the experimental technique to evaluate the optical absorption. The measures are made at 77 K for incidence at both 45° and Brewster angles geometries. The last experimental results compare well with the theoretical ones and correspond to 10–12  $\mu $ m operating wavelength.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 45 , Issue 2 , February 2009 , 20301
Copyright
© EDP Sciences, 2009

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