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Some structural aspects of PbxCd1−xTe bulk material

Published online by Cambridge University Press:  15 July 2004

E. Saucedo ,
L. Fornaro ,
V. Corregidor  and
E. Diéguez
E. Saucedo*
Affiliation:
Grupo de Semiconductores Compuestos, Facultad de Química, Universidad de la República, Montevideo 11800, Uruguay Departamento de Física de Materiales, Universidad Autónoma de Madrid, Madrid 28049, Spain
L. Fornaro
Affiliation:
Grupo de Semiconductores Compuestos, Facultad de Química, Universidad de la República, Montevideo 11800, Uruguay
V. Corregidor
Affiliation:
Departamento de Física de Materiales, Universidad Autónoma de Madrid, Madrid 28049, Spain
E. Diéguez
Affiliation:
Departamento de Física de Materiales, Universidad Autónoma de Madrid, Madrid 28049, Spain
*
esaucedo@fq.edu.uy
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Abstract

The ternary alloys PbxCd1−xTe were prepared by the vertical Bridgman method and studied from a morphological viewpoint. The evolution of the different defects with the Pb concentration was described. For x = 0.20, strong segregation was found. A supercrystal structure, formed by alternated layers of CdTe and PbTe was encountered in the PbTe rich phase. We propose some hypothesis about the mechanism for their formation. An interpretation of the optical behavior in the 0.2–0.6 eV infrared region will be also presented.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 427 - 430
Copyright
© EDP Sciences, 2004

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