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Phase transformation in Pb:GeSbTe chalcogenide films

Published online by Cambridge University Press:  21 October 2008

J. Kumar ,
P. Kumar ,
M. Ahmad ,
R. Chander ,
R. Thangaraj  and
T. S. Sathiaraj
J. Kumar
Affiliation:
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev Univeristy, Amritsar-143005, India
P. Kumar
Affiliation:
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev Univeristy, Amritsar-143005, India
M. Ahmad
Affiliation:
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev Univeristy, Amritsar-143005, India
R. Chander
Affiliation:
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev Univeristy, Amritsar-143005, India
R. Thangaraj*
Affiliation:
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev Univeristy, Amritsar-143005, India
T. S. Sathiaraj
Affiliation:
Department of Physics, University of Botswana, Botswana
*
rthangaraj@rediffmail.com
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Abstract

A comprehensive analysis on the amorphous to crystalline phase transformation in Pb:GeSbTe chalcogenide alloy has been discussed. The structure identified with X-ray measurements has been discussed in relation to thermal analysis carried out on bulk samples. Optical constants have been calculated in the 350 to 800 nm wavelength range, using Fresnel's equation. The effect of Pb substitution on the optical contrast in terms of change in reflectivity and optical parameters (viz. refractive index, extinction coefficient) has been discussed. Marginal decrease in the optical contrast has been observed with a small increase in Pb content, which is effective to maintain the sufficient signal to noise ratio for optical phase-change storage.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 44 , Issue 2 , November 2008 , pp. 117 - 123
Copyright
© EDP Sciences, 2008

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