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Interpretation method for mirror experiments based on a Monte Carlo charge implantation model

Published online by Cambridge University Press:  01 October 2002

F. Mady ,
R. Renoud ,
C. Attard ,
J. Bigarré ,
J.-P. Ganachaud  and
P. Hourquebie
F. Mady
Affiliation:
LPIO (EA 3254), Faculté des Sciences de Nantes, 2 rue de la Houssinière, 44322 Nantes Cedex 03, France
R. Renoud*
Affiliation:
LPIO (EA 3254), Faculté des Sciences de Nantes, 2 rue de la Houssinière, 44322 Nantes Cedex 03, France
C. Attard
Affiliation:
CEA, Le Ripault, BP 16, 37260 Monts, France
J. Bigarré
Affiliation:
CEA, Le Ripault, BP 16, 37260 Monts, France
J.-P. Ganachaud
Affiliation:
LPIO (EA 3254), Faculté des Sciences de Nantes, 2 rue de la Houssinière, 44322 Nantes Cedex 03, France
P. Hourquebie
Affiliation:
CEA, Le Ripault, BP 16, 37260 Monts, France
*
raphael.renoud@physique.univ-nantes.fr
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Abstract

The scanning electron microscope mirror (SEMM) method is considered as a suitable approach for the characterisation of the charge trapping ability of insulators. However, the interpretation of the experimental results is far from being obvious. The aim of this paper is to give some new insights in this problem. Our description of the mirror plots is conventionally based on a multipole analysis of the charge distribution and on the radius of curvature approximation. This approach indicates that the trend of the plots is mainly controlled by the quadrupole contribution. This clearly illustrates the non- uniqueness of the interpretation since different trapped charge distributions, but with nearly equal quadrupole terms, can produce rather similar mirror plots. To make the problem unambiguous, a semi-ellipsoidal shell model is used to account for the implanted space charge. Within this model, we propose a simple method to get the mean density of trapped charge ρ0. Our Monte Carlo simulations of the charge implantation phase show that ρ0 can strongly differ from the density of traps NT. The reasons for these deviations are discussed for a significant set of values of NT and of the primary energy Ep.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 20 , Issue 1 , October 2002 , pp. 41 - 53
Copyright
© EDP Sciences, 2002

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References

Blaise, G., Sarjeant, W.J., IEEE Trans. Dielectr. Electr. Insul. 5, 779 (1998) CrossRef
G. Moya, F. Moya, A. Ahmed, J. Bigarré, D. Juvé, C. Jardin, IEEE Annual Report 1996, Conference on Electrical Insulation and Dielectric Phenomena, p. 98
Damamme, G., Le Gressus, C., DeReggi, A.S., IEEE Trans. Dielectr. Electr. Insul. 4, 558 (1997) CrossRef
Vallayer, B., Blaise, G., Tréheux, D., Rev. Sci. Instrum. 70, 3102 (1999) CrossRef
Le Gressus, C., Valin, F., Henriot, M., Gautier, M., Duraud, J.-P., Sudarshan, T.S., Bommakanti, R.G., Blaise, G., J. Appl. Phys. 69, 6325 (1991) CrossRef
P. Carles, in Space Charge in Solid Dielectrics, Dielectric Society Meeting, April 1997, edited by J.C. Fothergill, L.A. Dissado (Dielectric Society, Leicester, UK), 1998, p. 67
Coelho, R., Aladenize, B., Garros, B., Acroute, D., Mirebeau, P., IEEE Trans. Dielectr. Electr. Insul. 6, 202 (1999) CrossRef
Bigarré, J., Hourquebie, P., J. Appl. Phys. 85, 7443 (1999) CrossRef
H.J. Wintle J. Appl. Phys. 86, 5961 (1999)
Bigarré, J., Attard, C., Hourquebie, P., Matallana, J., IEEE Trans. Dielectr. Electr. Insul. 8, 942 (2001) CrossRef
R. Renoud, F. Mady, J.-P. Ganachaud, in Proceeding of CSC4: 4th international conference on electric charges in non-conductive materials (Tours, France, 2001), p. 241
R. Renoud, J.-P. Ganachaud, F. Mady, in Proceeding of CSC4: 4th international conference on electric charges in non-conductive materials (Tours, France, 2001), p. 376
Renoud, R., Mady, F., Ganachaud, J.-P., J. Phys. Cond. Matter 14, 231 (2002) CrossRef
E. Durand, Électrostatique. I : Les Distributions (Masson, Paris, 1964), p. 100
Attard, C., Damamme, G., Ganachaud, J.-P., Renoud, R., Vicario, E., Vide (Suppl.) 287, 215 (1998)
C. Attard, J. Bigarré, P. Hourquebie, in Proceeding of the 2nd Conference on electrostatics (Montpellier, France, 2000), p. 77
J. Bigarré, C. Attard, P. Hourquebie, in Proceeding of CSC4: 4th international conference on electric charges in non-conductive materials (Tours, France, 2001), p. 45
Fitting, H.J., Hingst, Th., Franz, R., Schreiber, E., Scanning Microsc. 8, 165 (1994)
J. Liebault, Comportement d'alumines face à l'injection de charges. Relation microstructure - claquage diélectrique - mesure des charges d'influence (méthode SEMM), Ph.D. thesis, Institut National Polytechnique de Grenoble et École Nationale Supérieure des Mines de Saint-Etienne, 1999
G. Blaise, in Proceeding of CSC4: 4th international conference on electric charges in nonconductive materials (Tours, France, 2001), p. 31
Chen, H., Gong, H., Ong, C.K., J. Phys. Cond. Matter 7, 1129 (1995) CrossRef
Young, J.R., J. Appl. Phys. 27, 1 (1956) CrossRef
Fitting, H.J., Phys. Stat. Sol. A 46, 525 (1974) CrossRef
L. Reimer in Scanning Electron Microscopy: Physics of Image Formation and Microanalysis, Springer Series in Optical Sciences (edited by Springer-Verlag, Berlin, 1985), Chap. 3, Vol. 45, p. 96
Cazaux, J., Eur. Phys. J. AP 15, 167 (2001) CrossRef
C. Attard, Étude théorique de l'émission électronique secondaire d'une cible isolante et modélisation des effets de charge, Ph.D. thesis, University of Nantes, 1998