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Electronic conduction in 40 MeV28Si5+ ion irradiatedSe-Te-Pb thin films

Published online by Cambridge University Press:  14 April 2005

Maninder Singh Kamboj ,
R. Thangaraj  and
D. K. Avasthi
Maninder Singh Kamboj
Affiliation:
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar, 143005, India
R. Thangaraj*
Affiliation:
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar, 143005, India
D. K. Avasthi
Affiliation:
Nuclear Science Center, PO Box 10502, New Delhi 110067, India
*
rthangaraj@rediffmail.com
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Abstract

Amorphous thin films of Se $_{80-x}$ Te20Pbx (0 < x < 2) have been prepared by thermal evaporation. The effect of 40 MeV 28Si5+ ion irradiation on the electronic conduction of Se $_{80-x}$ Te20Pbx (0 < x < 2) thin films has been investigated. The DC electrical conductivity of the films increases by two to three order of magnitude with increase in irradiation fluence from 1012 to 5×1013 ions/cm2. The DC activation energy of conduction also increases with increase in irradiation fluence. Results have been explained on the basis of structural disorders and defects formed due to heavy ion irradiation.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 31 , Issue 1 , July 2005 , pp. 23 - 25
Copyright
© EDP Sciences, 2005

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