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X-Ray Diffraction Analysis Of Strain And Mosaic Structure In (001) Oriented Homoepitaxial Diamond Films

Published online by Cambridge University Press:  15 February 2011

W. Brock Alexander ,
Pehr E. Pehrsson ,
David Black  and
James E. Butler
W. Brock Alexander
Affiliation:
ASEE/NRL Postdoctoral Research Fellow, Chemistry Division, Naval Research Laboratory, Washington, DC 20375.
Pehr E. Pehrsson
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, DC 20375.
David Black
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899.
James E. Butler
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, DC 20375.
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Abstract

Homoepitaxial diamond films were grown on (001) oriented high pressure, high temperature type lb diamond by microwave plasma-assisted chemical vapor deposition to thicknesses of 27–48 μm. Substrates were polished off-axis 5.5° ±0.5° in the [100] direction prior to film deposition. Some of the diamond films developed tensile stress sufficiently large to result in cracking on { 111 } cleavage planes, while other films exhibited compressive stress. The strain and mosaic structure were measured with seven crystal x-ray diffraction. This characterization tool allowed the separation of misorientation effects from those of lattice parameter variation. Films exhibited smaller (˜88 ppm) and larger (˜27 ppm) perpendicular lattice parameters relative to the HPHT substrates. A cross-sectional approach for probing strain in diamond films with micro-Raman analysis was used to show stress distributions (˜100–300 MPa) through the thickness of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 305
Copyright
Copyright © Materials Research Society 1996

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References

1. van Enckevort, W. J. P., Jansen, G., Vollenberg, W., and Giling, L. J., J. of Crystal Growth, 148, 365 (1995).Google Scholar
2. Pehrsson, P. E., McCormick, T., Alexander, W. B., Marchywka, M., Black, D., Butler, J. E., and Prawer, S., Fall MRS Proc. Diamond for Electronic Applications, in press (1995).Google Scholar
3. Alexander, W. B., Holloway, P. H., Doering, P., and Linares, R., Fall MRS Proc. Diamond for Electronic Applications, in press (1995).Google Scholar
4. Schermer, J. J., van Enckevort, W. J. P., and Giling, L. J., Diamond and Related Mat., 3, 408(1994).Google Scholar
5. Lang, A. R., J. Appl. Cryst, 27, 988 (1994).Google Scholar
6. Wierzchowski, W., Moore, M., Makepeace, A. P. W., and Yacoot, A., J. of Crystal Growth, 114, 209(1991).Google Scholar
7. Field, J. E., Eds., The Properties of Natural and Synthetic Diamond (Academic Press, London, 1992).Google Scholar
8. Bartels, W. J., J. Vac. Sci. Technol. B, 1, 338 (1983).Google Scholar
9. Bonse, U. and Hart, M., Appl. Phys. Lett., 7, 238 (1965).Google Scholar
10. Fewster, P. F. and Andrew, N. L., J. Appl. Phys., 74, (5), 3121 (1993).Google Scholar
11. Cullity, B. D., Elements of X-Ray Diffraction p. 103, 292 (Addison-Wesley Publishing Co. Inc., reading, MA. 1978).Google Scholar
12. Ohring, M., The Materials Science of Thin Films (Academic Press, Boston, 1992).Google Scholar
13. Chopra, K. L., Thin Film Phenomena (McGraw-Hill, Inc., New York, 1969).Google Scholar
14. Woods, G. S., van Wyk, J. A., and Collins, A. T., Phil. Mag., B 62, 589 (1990).Google Scholar
15. Bums, R. C., Cvetkovic, V., Dodge, C. N., Evans, D. J. F., Rooney, M.-L. T., Spear, P. M., and Welboume, C. M., J. Cryst. Growth, 104, 257 (1990).Google Scholar
16. Frank, F. C., Lang, A. R., Evans, D. J. F., Rooney, M.-L. T., Spear, P. M., and Welbourne, C. M., J. Cryst. Growth, 100, 354 (1990).Google Scholar