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Unipolar Switching Behavior in Highly Crystalline Hexagonal Boron Nitride

Published online by Cambridge University Press:  22 May 2014

Nikhil Jain ,
Robin B. Jacobs-Gedrim  and
Bin Yu
Nikhil Jain
Affiliation:
College of Nanoscale Science & Engineering, State University of New York, 257 Fuller Road, Albany, NY 12203, U.S.A.
Robin B. Jacobs-Gedrim
Affiliation:
College of Nanoscale Science & Engineering, State University of New York, 257 Fuller Road, Albany, NY 12203, U.S.A.
Bin Yu
Affiliation:
College of Nanoscale Science & Engineering, State University of New York, 257 Fuller Road, Albany, NY 12203, U.S.A.
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Abstract

We observed resistive switching in highly crystalline layered insulator hexagonal boron nitride (h-BN) under electric field in a nano-device configuration. Two distinct resistive states were observed in the 2D material heterostack. Electrical characterization using capacitance-voltage approach further revealed the role of h-BN as the active switching element. The switching behavior could be attributed to substitutional doping of h-BN under electric field present in the active region, possibly resulting in the formation of multi-element complex in which electrical conductivity depends on the amount of substituted dopant in the boron nitride crystal lattice. Since switching is observed independent of the direction of electric field, it is unipolar in nature. The observed memristance phenomenon in layered insulator may be potentially used in the form of NVM, providing possible direction to implement information storage or reconfigurable logic applications.

Keywords

devicesmemorynanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1658: Symposium RR – Large-Area Graphene and Other 2D-Layered Materials—Synthesis, Properties and Applications , 2014 , mrsf13-1658-rr15-28
Copyright
Copyright © Materials Research Society 2014 

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References

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