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Thin Oxynitride Films Prepared by Low Pressure Rapid Thermal Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

P.K. Mclarty ,
W.L. Hill ,
X.L Xu ,
J.J. Wortman  and
G.S. Harris
P.K. Mclarty
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
W.L. Hill
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
X.L Xu
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
J.J. Wortman
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
G.S. Harris
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
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Abstract

Thin silicon oxynitride (Si-O-N) films have been deposited using low pressure rapid thermal chemical vapor deposition (RTCVD) with silane (SiH4), nitrous oxide (N2O), and ammonia (NH3) as the reactive gases. Structural analysis coupled with a study of deposition conditions indicate that an increase in NH3/N2O flow rate ratios leads to an increased N/O atomic ratio and a decreased Si-O-N deposition rate. Thin film (55-75A) polySi/Si-N-O/Si capacitors and transistors were fabricated for NH3/N2O flow rate ratios from 20% to 100%. Some of the films were subjected to a post deposition anneal at 950°C for 15 seconds in both argon and oxygen. Capacitance voltage measurements indicate a mid-gap interface trap density of ≤ 6 × 1010 eV−1cm−2 for all the films independent of both nitrogen content and post deposition annealing conditions. The transconductance was studied as a function of NH3/N2O flow rate ratio and decreasing peak gm values but improved high field degradation was observed for increased nitrogen content. This is consistent with previous work on nitrided oxides and suggests that the films are under tensile stress. Hot carrier stress at maximum substrate current was performed with the Si-O-N films displaying larger threshold voltage shifts when compared to furnace SiO2 indicating the possible existence of hydrogen related traps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 43
Copyright
Copyright © Materials Research Society 1993

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References

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