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Thin Film Polycrystalline Si by Cs Solution Growth Technique

Published online by Cambridge University Press:  28 February 2011

Richard L. Wallace ,
Wayne A. Anderson  and
K. M. Jones
Richard L. Wallace
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Buffalo, NY 14260
Wayne A. Anderson
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Buffalo, NY 14260
K. M. Jones
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden CO 80401-3393
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Abstract

A deposition process has been developed which allows the growth of large grain (20+ μm) polysilicon films on SiO2 substrates at a growth temperature of 650° C. A thin layer of liquid Si-metal solution is formed on the substrate surface as the growth medium. This layer is kept saturated by Si flux from a DC magnetron sputter gun. XRD analysis of the deposited films show a strong (111) preferred orientation, with increasing integrated peak intensities with increasing depositon temperature and solution layer thickness. Films deposited using an In-Si solution are p-type, with carrier concentrations in the mid 1016 cm−3 range. Conductivities of ∼.2 (Ω cm)−1 were measured, with activation energies for both carrier generation and conductivity of about 135meV. The hole mobility was found to be ∼ 30 cm2 V−1s−1. A wetting layer is used which may have a detrimental effect on the minority carrier lifetime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 883
Copyright
Copyright © Materials Research Society 1995

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References

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