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Thickness-Dependent Micro-Raman Measurement of Poly-Si Films Prepared by Metal-Induced-Crystallization using a Ni Layer

Published online by Cambridge University Press:  17 March 2011

Shin-ichi Muramatsu ,
Yasushi Minagawa ,
Fumihito Oka  and
Yoshiaki Yazawa
Shin-ichi Muramatsu
Affiliation:
Advanced Research Center, Hitachi Cable, Ltd., Tsuchiura-shi, Ibaraki 300-0026, Japan
Yasushi Minagawa
Affiliation:
Advanced Research Center, Hitachi Cable, Ltd., Tsuchiura-shi, Ibaraki 300-0026, Japan
Fumihito Oka
Affiliation:
Advanced Research Center, Hitachi Cable, Ltd., Tsuchiura-shi, Ibaraki 300-0026, Japan
Yoshiaki Yazawa
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji-shi, Tokyo 185-8601, Japan
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Abstract

Relatively thick amorphous silicon films for solar-cell applications were prepared by metal-induced-crystallization (MIC). Then, the thickness-dependent characteristics of micro-Raman spectra from a cross section of the prepared polycrystalline silicon (poly-Si) films were analyzed. It was found that Ni-induced crystallized films have a uniform composition that is 80% polycrystalline and 20% nanocrystalline. Also, the x-ray diffraction data show that a sub-mono-layer of Ni is sufficient for MIC of 6-μm-thick amorphous silicon (a-Si) films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A9.6
Copyright
Copyright © Materials Research Society 2000

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References

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